BSP315 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -50 - -GS ..
BSP315P ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-Source on- ..
BSP315P L6327 , SIPMOS® Small-Signal-Transistor
BSP316 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP316 ,SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP316P ,Low Voltage MOSFETsFeatureV -100 VDS• P-ChannelR 1.8 ΩDS(on)• Enhancement modeI -0.68 AD• Logic LevelP-SOT223-4-1• dv/ ..
BZG05C4V7 ,Silicon Z-DiodesFeatures
BSP315
P-Channel SIPMOS Small-Signal Transistor
BSP 315
SIPMOS ® Small-Signal Transistor• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Maximum Ratings
BSP 315
Maximum Ratings1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSP 315
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSP 315
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSP 315
Power dissipation tot = ƒ(TA)20406080100120°C160A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0 tot
Drain current D = ƒ(TA)
parameter: VGS ≥ -10 V20406080100120°C160A
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.2 D
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Transient thermal impedance th JA = ƒ(tp)p / T
-4 10
-3 10
-2 10
-1 10 10 10 10
K/W thJC
BSP 315
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.0-1.0-2.0-3.0-4.0V-6.0DS
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.6 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C
0.0-0.4-0.8-1.2-1.6A-2.4D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.6 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 μs
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0 D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 μs,
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1 fs
