BSP295 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
BSP296 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
BSP297 ,SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSP297 ,SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
BSP300 ,SIPMOS Small-Signal TransistorBSP 300 ® SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Avalanche rated• V = 2.0... ..
BSP300 ,SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 800 - -GS ..
BZG05C24TR , Zener Diodes
BZG05C27 ,Silicon Z-DiodesFeatures
BSP295
Low Voltage MOSFETs
Infineon
technologies
SIPMOS © Small-Signal Transistor
. N channel
. Enhancement mode
. Logic Level
. VGSUh) = 0.8...2.0V
BSP 295
VPSOSS6O
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type VDS ID RDs(on) Package Marking
BSP 295 50 V 1.8 A 0.3 n SOT-223 BSP 295
Type Ordering Code Tape and Reel Information
BSP 295 Q67000-SO66 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage V03 50 V
Drain-gate voltage VDGR
Res = 20 kg 50
Gate source voltage VGS i- 20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Continuous drain current ID A
TA = 34 ( 1.8
DC drain current, pulsed leu,S
TA = 25 "C 7.2
Power dissipation Ptot W
TA = 25 ( 1.8
Data Sheet 1 05.99
Infineon BSP 295
technologies
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature li -55 ... + 150 (
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air RthJA f 70 K/W
Thermal resistance, junction-soldering point 1) Rthus f 10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/ 150/56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at r, = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V
DSS V
VGS = 0 V, ID = 0.25 mA, T-- 25°C 50 - -
Gate threshold voltage VGSM
VGs=VDs, ID = 1 mA 0.8 1.4 2
Zero gate voltage drain current IDSS
VDS=50V, VGS=OV, Tj=25°c - 0.1 1 pA
VDS=5OV,VGS=OV,7]=125°C - 8 50
VDS=30V,VGS=0V, Tj=25“C - - 100 nA
Gate-source leakage current less nA
VGS=20V, VDS=OV - 10 100
Drain-Source on-state resistance RDSWI) Q
VGS =10 V, ID = 1.8 A - 0.25 0.3
Vss = 4.5 v, b = 1.8 A - 0.45 0.5
Data Sheet 2 05.99
