BSP250 ,P-channel enhancement mode vertical D-MOS transistorAPPLICATIONS4 d drain• Low-loss motor and actuator drivers• Power switching.DESCRIPTIONhandbook, ha ..
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP295 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
BSP296 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 100 - -GS ..
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BZG05C18 ,Silicon Z-DiodesFeatures
BSP250
P-channel enhancement mode vertical D-MOS transistor
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP250
FEATURES High-speed switching No secondary breakdown Very low on-resistance.
APPLICATIONS Low-loss motor and actuator drivers Power switching.
DESCRIPTIONP-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP250
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Notes Pulse width and duty cycle limited by maximum junction temperature. Device mounted on an epoxy printed-circuit board, 40×40× 1.5 mm; mounting pad for drain lead minimum6 cm2.
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP250
THERMAL CHARACTERISTICS
Note Device mounted on an epoxy printed-circuit board, 40×40× 1.5 mm; mounting pad for drain lead minimum6 cm2.
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP250
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP250
