BSP230 ,P-channel vertical D-MOS intermediate level FETAPPLICATIONS• Line current interruptor in telephone sets g• Relay, high speed and line transformer ..
BSP250 ,P-channel enhancement mode vertical D-MOS transistorAPPLICATIONS4 d drain• Low-loss motor and actuator drivers• Power switching.DESCRIPTIONhandbook, ha ..
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP254 ,P-channel enhancement mode vertical D-MOS transistor
BSP295 ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚C 50 - -GS D ..
BZG05C16 ,Silicon Z-DiodesAbsolute Maximum RatingsT = 25
BSP230
P-channel vertical D-MOS intermediate level FET
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.
APPLICATIONS Line current interruptor in telephone sets Relay, high speed and line transformer drivers.
DESCRIPTIONP-channel enhancement mode vertical D-MOS transistor
in a SOT223 plastic SMD package.
PINNING - SOT223
QUICK REFERENCE DATA
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics Device mounted on an epoxy printed-circuit board, 40×40× 1.5 mm; mounting pad for drain lead minimum6 cm2.
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
Philips Semiconductors Product specification
P-channel enhancement mode
vertical D-MOS transistor BSP230
