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BSP171
P-Channel SIPMOS Small-Signal Transistor
BSP 171
SIPMOS ® Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• Avalanche rated
• VGS(th) = -0.8...-2.0 V
Maximum Ratings
BSP 171
Maximum Ratings1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Static Characteristics
BSP 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Dynamic Characteristics
BSP 171
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Reverse Diode
BSP 171
Power dissipation tot = ƒ(TA)20406080100120°C160A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0 tot
Drain current D = ƒ(TA)
parameter: VGS ≥ -10 V20406080100120°C160A
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.8 D
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Transient thermal impedance th JA = ƒ(tp)p / T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10 10
K/W thJC
BSP 171
Typ. output characteristics D = ƒ(VDS)
parameter: tp = 80 μs
0.0-0.5-1.0-1.5-2.0-2.5-3.0-3.5-4.0V-5.0DS
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.8 D
Typ. drain-source on-resistance DS (on) = ƒ(ID)
parameter: tp = 80 μs, Tj = 25 °C
0.0-0.4-0.8-1.2-1.6-2.0-2.4-2.8-3.2A-3.8D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1 DS (on)
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 μsDS≥ 2 x ID x RDS(on)max
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.6 D
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 μs,DS≥2 x ID x RDS(on)max
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2 fs
