BSP16T1 ,SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BSP16T1G , High Voltage Transistors PNP Silicon
BSP17 E6327 ,N-Channel SIPMOS Small-Signal TransistorBSP 17 ®SIPMOS Small-Signal Transistor• N channel• Enhancement mode• Avalanche rated• V = 2.1 ... 4 ..
BSP171 ,P-Channel SIPMOS Small-Signal TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -60 - -GS ..
BSP171P ,Low Voltage MOSFETsFeaturesV -60 VDS• P-ChannelR 0.3ΩDS(on),max• Enhancement modeI -1.9 AD• Logic level• Avalanche rat ..
BSP19 ,NPN high-voltage transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP16T1
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BSP16T1
Preferred Device High Voltage T ransistors
PNP Silicon
Features Pb−Free Package is Available
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in x
0.059 in; mounting pad for the collector lead min. 0.93 sq. in.
