BSP135 ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =-3 V, I =250 µA 600 - - V(BR)DSS GS DV V =3 V, I ..
BSP135 ,Low Voltage MOSFETsFeaturesV 600 VDS• N-channelR 60ΩDS(on),max• Depletion modeI 0.02 ADSS,min• dv /dt ratedSOT-223Type ..
BSP149 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSP149 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSP15 , SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BSP15 , SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP135
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
SIPMOS® Small-Signal-Transistor
Features
. N-channel
. Depletion mode
. dv/dt rated
BSP135
Product Summary
VDS 600 V
RDS(on),max 60
lDSSmin 0.02
SOT-223
drain pins 2, 4
source pin3
Type Package
Ordering Code
Tape and Reel Information Marking
BSP135 SOT-223
Q62702-S655
E6327: 1000 pcs/reel BSP135
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TA=25 'C 0.12 A
TA=70 'C 0.10
Pulsed drain current lepuBe TA=25 'C 0.48
ID=0.12 A, VDS=20 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Tj'max=150 ''C
Gate source voltage VGS :20 V
ESD sensitivity (HBM) as per
MIL-STD 883 Class 1
Power dissipation Ptot TA=25 'C 1.8 W
Operating and storage temperature Ts, Tsta -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.0 page 1 2003-04-03
CP""''"
Infineon
lechnologies
BSP135
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4) Rmos - - 25 KAN
SMD version, device on PCB RmJA minimal footprint - - 115
6 cm2 cooling areal) - - 70
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-3 V, I D=250 pA 600 - - V
Gate threshold voltage Vegan) VDS=3 V, ID=94 pA -2.1 -1.4 -1
. VDS=600 V,
Drain-source cutoff current loom Ves=-3 V, Tj=25 t2 C - - 0.1 pA
Vos=600 V, 10
VGS=-3 v, Tj=125 "C - -
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - - 100 nA
On-state drain current loss Vss--0 V, Vos=10 V 20 - - mA
Drain-source on-state resistance Roam) VGS=O V, I D=0.01A - 30 60 Q
Vss=10 V, ID=0.12 A - 25 45
V >2 I R
Transconductance gfs ll Egl1 ADI DS(on)max, 0.08 0.16 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 2 2003-04-03
