BSP130 ,N-channel enhancement mode vertical D-MOS transistorAPPLICATIONS4 drain• Line current interruptor in telephone sets• Relay, high-speed and line transfo ..
BSP130 ,N-channel enhancement mode vertical D-MOS transistor
BSP135 ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =-3 V, I =250 µA 600 - - V(BR)DSS GS DV V =3 V, I ..
BSP135 ,Low Voltage MOSFETsFeaturesV 600 VDS• N-channelR 60ΩDS(on),max• Depletion modeI 0.02 ADSS,min• dv /dt ratedSOT-223Type ..
BSP149 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSP149 ,SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP130
N-channel enhancement mode vertical D-MOS transistor
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP130
FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown.
APPLICATIONS Line current interruptor in telephone sets Relay, high-speed and line transformer drivers.
DESCRIPTIONN-channel enhancement mode vertical D-MOS transistor
in a SOT223 package.
PINNING - SOT223
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mountedonan epoxy printed-circuit board,40x40x 1.5 mm, mounting padfor the drain tab minimum6 cm2.
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP130
THERMAL CHARACTERISTICS
Note Device mountedonan epoxy printed-circuit board,40x40x 1.5 mm, mounting padfor the drain tab minimum6 cm2.
STATIC CHARACTERISTICSTj = 25 °C unless otherwise specified.
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP130
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP130
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP130
