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Partno	Mfg	Dc	Qty	Available	Descript
BSP123	SIEMENS	N/a	800	avai	Low Voltage MOSFETs
BSP123	INFINEON	N/a	1148	avai	Low Voltage MOSFETs

BSP123 ,Low Voltage MOSFETsFeatureV 100 VDS• N-ChannelR 6 ΩDS(on)• Enhancement modeI 0.37 AD• Logic LevelSOT223• dv/dt ratedTy ..
BSP123 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 100 - - V(BR)DSSV =0, I =250µAGS D0.8 1.4 1.8Gate t ..
BSP125 ,SIPMOS Power-TransistorFeatureV 600 VDS• N-ChannelR 45 ΩDS(on)• Enhancement modeI 0.12 AD• Logic LevelSOT-223• dv/dt rated ..
BSP125 ,SIPMOS Power-TransistorCharacteristics600 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =0.25mAGS D1.3 1.9 2.3Gate t ..
BSP126 ,N-channel vertical D-MOS logic level FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BSP129 ,Low Voltage MOSFETsFeaturesV 240 VDS• N-channelR 6ΩDS(on),max• Depletion modeI 0.05 ADSS,min• dv /dt ratedSOT-223Type ..
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25

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BSP123
Low Voltage MOSFETs
Rev. 1.0BSP123
SIPMOSÒ Small-Signal-TransistorProduct Summary
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt ratedSOT223
Maximum Ratings, at T = 25 °C, unless otherwise specified
Rev. 1.0BSP123
Thermal Characteristics
Characteristics
Electrical Characteristics, at T = 25 °C, unless otherwise specified
Static Characteristics
Rev. 1.0BSP123
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Rev. 1.0BSP123
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.9 BSP123
tot
2 Drain currentD = f (TA)
parameter: VGS³ 10 V
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.4 BSP123
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 10
-1 10 10 10
BSP123
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSP123
thJA
Rev. 1.0BSP123
5 Typ. output characteristicD = f (VDS)
parameter: Tj = 25 °C, VGS
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
10
12
14
16
20
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
8 Typ. forward transconductancefs = f(ID)
parameter: Tj = 25 °C
0.05
0.1
0.15
0.2
0.25
0.3
0.4
Rev. 1.0BSP123
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 0.37 A, VGS = 10 V
10
12
14
16
18
20 BSP123
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS; ID =50µA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C10 10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-2 10
-1 10 10 10
BSP123

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