BSP122 ,N-channel enhancement mode vertical D-MOS transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).SYMBOL PARAMETER CONDITIO ..
BSP123 ,Low Voltage MOSFETsFeatureV 100 VDS• N-ChannelR 6 ΩDS(on)• Enhancement modeI 0.37 AD• Logic LevelSOT223• dv/dt ratedTy ..
BSP123 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 100 - - V(BR)DSSV =0, I =250µAGS D0.8 1.4 1.8Gate t ..
BSP125 ,SIPMOS Power-TransistorFeatureV 600 VDS• N-ChannelR 45 ΩDS(on)• Enhancement modeI 0.12 AD• Logic LevelSOT-223• dv/dt rated ..
BSP125 ,SIPMOS Power-TransistorCharacteristics600 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =0.25mAGS D1.3 1.9 2.3Gate t ..
BSP126 ,N-channel vertical D-MOS logic level FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP122
N-channel enhancement mode vertical D-MOS transistor
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP122
FEATURES Direct interface to C-MOS, TTL,
etc. High-speed switching No secondary breakdown.
DESCRIPTIONN-channel enhancement mode
vertical D-MOS transistor in a
SOT223 package and intended for
use as a line current interruptor in
telephone sets andfor applicationsin
relay, high-speed and line
transformer drivers.
PINNING - SOT223
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).
Note Transistor mounted on an epoxy printed circuit board, 40x40x 1.5 mm, mounting pad for the drain tab minimum
6cm2.
THERMAL CHARACTERISTICS
Note Transistor mounted on an epoxy printed circuit board, 40x40x 1.5 mm, mounting pad for the drain tab minimum
6cm2.
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP122
CHARACTERISTICSTj = 25°C unless otherwise specified.
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP122
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP122
DATA SHEET STATUS
Notes Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL .
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device theseorat any other conditions abovethosegivenin the
Characteristics sectionsof the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make representationor warranty thatsuch applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonablybe expectedto resultin personal injury. Philips
Semiconductors customers usingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the rightto make changes, without notice,in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the useof anyof these products, conveysno licence ortitle
under any patent, copyright, or mask work right to these
products, and makesno representationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor BSP122
NOTES
