BSP121 ,N-channel enhancement mode vertical D-MOS transistor
BSP122 ,N-channel enhancement mode vertical D-MOS transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 60134).SYMBOL PARAMETER CONDITIO ..
BSP123 ,Low Voltage MOSFETsFeatureV 100 VDS• N-ChannelR 6 ΩDS(on)• Enhancement modeI 0.37 AD• Logic LevelSOT223• dv/dt ratedTy ..
BSP123 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 100 - - V(BR)DSSV =0, I =250µAGS D0.8 1.4 1.8Gate t ..
BSP125 ,SIPMOS Power-TransistorFeatureV 600 VDS• N-ChannelR 45 ΩDS(on)• Enhancement modeI 0.12 AD• Logic LevelSOT-223• dv/dt rated ..
BSP125 ,SIPMOS Power-TransistorCharacteristics600 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =0.25mAGS D1.3 1.9 2.3Gate t ..
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSP121
