BSO615N .. ,Low Voltage MOSFETsCharacteristics, at T = 25 ˚C, unless otherwise specifiedjParameter Symbol Values Unitmin. typ. max ..
BSO615NG , SIPMOS Small-signal-Transistor
BSO615NV ,Low Voltage MOSFETsFeaturesDrain source voltage 60 VV• Dual N ChannelDSDrain-Source on-state resistance 0.12• Enhancem ..
BSO615NV ,Low Voltage MOSFETsCharacteristicsDrain- source breakdown voltage 60 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BSP030 ,N-channel enhancement mode field-effect transistorApplications■ Motor and actuator drivercc■ Battery management■ High speed, low resistance switch.4. ..
BSP030 ,N-channel enhancement mode field-effect transistor
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25
BSO615N-BSO615N .-BSO615N ..
Low Voltage MOSFETs
( Infineon
technologies
Preliminary Data
S|PMOS® Small-Signal-Transistor
Features
. Dual N Channel
. Enhancement mode
o Avalanche rated
BSO 615N
Product Summary
Drain source voltage bbs 60 V
Drain-Source on-state resistance RDsmm 0.15 f2
Continuous drain current ID 2.6 A
0 Logic Level
. dv/dt rated
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Top View
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Type Package Ordering Code
BSO 615N SO 8 Q67041-S2843
Maximum Ratings, at Ti = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current, one channel active ID 2.6 A
Pulsed drain current, one channel active /Dpulse 10.4
TA = 25 (
Avalanche energy, single pulse EAS 60 mJ
ID = 2.6 A, VDD= 25 v, Rss = 25 Q
Avalanche current,periodic limited by Timex IAR 2.6 A
Avalanche energy, periodic limited by Timax EAR 0.18 mJ
Reverse diode dv/dt dv/dt 6 kV/ps
ls = 2.6 A, VDS = 40 V,di/dt= 200 Alps,
ijax = 150 (
Gate source voltage VGS $20 V
Power dissipation, one channel active Ptot 2 W
TA = 25 (
Operating temperature Ti -55 ... +150 (
Storage temperature Tsta -55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Data Sheet
Infineon BSO 615N
technology
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 35 K/W
Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 100
Thermal resistance @ 10 sec., RWA) - - 62.5
6 cm2 cooling area 1)
Electrical Characteristics, at Ti = 25 ''C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 60 - - V
VGS = o V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 20 pA
Zero gate voltage drain current bss pA
VDS=60V, VGS=0V, Tj=25°C - 0.1 1
VDS=6OV,VGS=OV, Tj=150°C - 10 100
Gate-source leakage current IGSS - 10 100 nA
VGS=20V, VDS=OV
Drain-Source on-state resistance RDS(on) Q
VGS=4.5V, ID=2.6A - 0.12 0.15
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70pm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
