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Partno	Mfg	Dc	Qty	Available	Descript
BSO612CV	INFINEON	N/a	3000	avai	Low Voltage MOSFETs

BSO612CV ,Low Voltage MOSFETsFeatures Product Summary N PDrain source voltage V 60 -60 V• Dual N- and P -ChannelDS• Enhancement ..
BSO612CVG , SIPMOS Small-Signal-Transistor
BSO613SPV ,Low Voltage MOSFETsFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
BSO615 ,SIPMOS Small-Signal-TransistorCharacteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO615C . ,Low Voltage MOSFETsCharacteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO615N ,Low Voltage MOSFETsFeatures Product SummaryDrain source voltage 60 VV• Dual N ChannelDSDrain-Source on-sta ..
BZG04-8V2 ,Transient voltage suppressor diodes
BZG05C10 ,Silicon Z-DiodesElectrical CharacteristicsT = 25

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BSO612CV
Low Voltage MOSFETs
Preliminary dataBSO 612 CV
SIPMOS Small-Signal-Transistor
Product SummaryNP
Features
• Dual N- and P -Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO 612 CV
Termal Characteristics
Dynamic Characteristics
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO 612 CV
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Characteristics
Preliminary dataBSO 612 CV
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Characteristics
Reverse Diode
Preliminary dataBSO 612 CV
Power Dissipation (P-Ch.)tot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
tot
Power Dissipation (N-Ch.)tot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
tot
Drain current (N-Ch.)D = f (TA)
parameter: V≥ 10 V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.2
Drain current (P-Ch.)D = f (TA)
parameter: V≥ -10 V
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.2
Preliminary dataBSO 612 CV
Safe operating area (N-Ch.)D = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 2
-2 10
-1 10 10 10 10
Safe operating area (P-Ch.)D = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10
-2 -10
-1 -10 -10 -10
Transient thermal impedance (N-Ch.)thJC = f(tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJC
Transient thermal impedance (P-Ch.)thJC = f(tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJC
Preliminary dataBSO 612 CV
Typ. output characteristics (N-Ch.)D = f (VDS)
parameter: t = 80 μs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.5
Typ. output characteristics (P-Ch.)D = f (VDS)
parameter: t = 80 μs
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-5.0
Typ. drain-source-on-resistance (N-Ch.)DS(on) = f (ID)
parameter: V
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
DS(on)
Typ. drain-source-on-resistance (P-Ch.)DS(on) = f (ID)
parameter: V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
DS(on)

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