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Partno	Mfg	Dc	Qty	Available	Descript
BSO4822	INFINEON	N/a	5000	avai	Low Voltage MOSFETs

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BSO4822
Low Voltage MOSFETs
Preliminary dataBSO4822
OptiMOS� Small-Signal-TransistorProduct Summary
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Preliminary dataBSO4822
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO4822
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO4822
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
BSO4822
tot
2 Drain currentD = f (TA)
parameter: VGS≥ 10 V
10
11
12
BSO4822
3 Safe operating areaD = f ( V
parameter : D = 0 , T
-2 10
-1 10 10 10 10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
thJS
Preliminary dataBSO4822
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
12
14
16
18
20
22
24
BSO4822
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
12
16
20
24
32 BSO4822
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
12
16
20
24
32
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
45
50
Preliminary dataBSO4822
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 12.7 A, VGS = 10 V
10
12
14
16
18 BSO4822
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
BSO4822
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10 10

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