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Partno	Mfg	Dc	Qty	Available	Descript
BSO4804	INFIEON	N/a	4119	avai	Low Voltage MOSFETs
BSO4804 . \|BSO4804	Infineon	N/a	3020	avai	Low Voltage MOSFETs

BSO4804 ,Low Voltage MOSFETsFeatureV30 VDS

BSO4804-BSO4804 .
Low Voltage MOSFETs
Preliminary dataBSO4804
OptiMOS
=Small-Signal-Transistor
Product Summary
Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x R150°C operating temperature Avalanche rated dv/dt ratedIdeal for fast switching applications
Preliminary dataBSO4804
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO4804
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO4804
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSO4804
tot
2 Drain currentD = f (TA)
parameter: VGS 10 V
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , T
-2 10
-1 10 10 10 10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
thJS
Preliminary dataBSO4804
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
12
14
16
19
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
15
20
25
30
35
40
45
50
55 BSO4804
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS- 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
40
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
35
Preliminary dataBSO4804
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 8 A, VGS = 10 V
12
16
20
24
28
32
36 BSO4804
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = 30 µA
0.5
1.5
2.5
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
BSO4804
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10 10

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