BSO4420 ,Low Voltage MOSFETsCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
BSO4804 ,Low Voltage MOSFETsFeatureV30 VDS
BSO4420
Low Voltage MOSFETs
Preliminary dataBSO4420
OptiMOS� Small-Signal-Transistor
Product Summary
Feature• N-Channel
• Logic Level
• Very low on-resistance R
• Excellent Gate Charge x R
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Preliminary dataBSO4420
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO4420
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO4420
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
BSO4420
tot
2 Drain currentD = f (TA)
parameter: VGS≥ 10 V
10
11
12
BSO4420
3 Safe operating areaD = f ( V
parameter : D = 0 , T
-2 10
-1 10 10 10 10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO4420
thJS
Preliminary dataBSO4420
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
12
16
20
24
32 BSO4420
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0.022
0.024
0.03
BSO4420
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
10
20
30
40
60
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
15
20
25
30
35
40
50
Preliminary dataBSO4420
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 13 A, VGS = 10 V
0.002
0.004
0.006
0.008
0.01
0.012
0.016 BSO4420
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
2.5
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 10 10 10 10
BSO4420
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
