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Partno	Mfg	Dc	Qty	Available	Descript
BSO315C	INFINEON	N/a	75000	avai	Dual N- and P-Channel SIPMOS Small-Si...

BSO315C ,Dual N- and P-Channel SIPMOS Small-Si...Characteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO350N03 ,Low Voltage MOSFETsapplications• Dual n-channel• Logic levelP-DSO-8• Excellent gate charge x R product (FOM)DS(on)• Ve ..
BSO4410 ,Low Voltage MOSFETsapplicationsType Package Ordering Code MarkingBSO4410 SO 8 Q67042-S40964410Maximum Ratings,at T = ..
BSO4410 . ,Low Voltage MOSFETsCharacteristicsV 30 - - VDrain-source breakdown voltage(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
BSO4420 ,Low Voltage MOSFETsCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
BSO4804 ,Low Voltage MOSFETsFeatureV30 VDS

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BSO315C
Dual N- and P-Channel SIPMOS Small-Si...
Preliminary dataBSO 315 C
SIPMOS Small-Signal-Transistor
Product SummaryNP
Features
• Dual N- and P -Channel
• Enhancement mode
• Logic Level
• Avalanche rated
• dv/dt rated
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO 315 C
Termal Characteristics
Dynamic Characteristics
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO 315 C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Characteristics
Preliminary dataBSO 315 C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Characteristics
Reverse Diode
Preliminary dataBSO 315 C
Power Dissipation (P-Ch.)tot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
tot
Power Dissipation (N-Ch.)tot = f (TA)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.2
tot
Drain current (N-Ch.)D = f (TA)
parameter: V≥ 10 V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.6
Drain current (P-Ch.)D = f (TA)
parameter: V≥ -10 V
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-2.2
-2.6
Preliminary dataBSO 315 C
Safe operating area (N-Ch.)D = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 2
-2 10
-1 10 10 10 10
Safe operating area (P-Ch.)D = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 2
-2 -10
-1 -10 -10 -10
Transient thermal impedance (N-Ch.)thJC = f(tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJC
Transient thermal impedance (P-Ch.)thJC = f(tp)
parameter : D = tp/T
-2 10
-1 10 10 10 10
thJC
Preliminary dataBSO 315 C
Typ. output characteristics (N-Ch.)D = f (VDS)
parameter: t = 80 μs
0.0
1.0
2.0
3.0
4.0
5.0
6.0
8.0
Typ. output characteristics (P-Ch.)D = f (VDS)
parameter: t = 80 μs
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
Typ. drain-source-on-resistance (N-Ch.)DS(on) = f (ID)
parameter: V
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.36
DS(on)
Typ. drain-source-on-resistance (P-Ch.)DS(on) = f (ID)
parameter: V
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.80
DS(on)

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