BSO303SP ,Low Voltage MOSFETsFeatureV -30 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.9 AD• Logic Level• 150°C operating t ..
BSO305N ,Dual N-Channel SIPMOS Small-Signal Tr...FeaturesDrain source voltage 30 V• Dual N Channel VDSDrain-Source on-state resistance 0.035• Enhanc ..
BSO307N ,Dual N-Channel SIPMOS Small-Signal Tr...FeaturesDrain source voltage 30 VV• Dual N channelDSDrain-Source on-state resistance 0.05• Enhancem ..
BSO307N ,Dual N-Channel SIPMOS Small-Signal Tr...CharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mA, T = 25 ˚CGS D ..
BSO315C ,Dual N- and P-Channel SIPMOS Small-Si...Characteristics, at T = 25 °C, unless otherwise specifiedjDrain- source breakdown voltage V V(BR ..
BSO350N03 ,Low Voltage MOSFETsapplications• Dual n-channel• Logic levelP-DSO-8• Excellent gate charge x R product (FOM)DS(on)• Ve ..
BZG03C82 ,Voltage regulator diodes
BZG03-C82 ,Voltage regulator diodes
BZG03-C91 ,Voltage regulator diodes
BZG04-10 ,Transient voltage suppressor diodes
BZG04-150 ,Transient voltage suppressor diodes
BZG04-16 ,16V suppressor diodeElectrical CharacteristicsT = 25
BSO303SP
Low Voltage MOSFETs
Preliminary dataBSO303SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO303SP
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO303SP
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO303SP
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2 BSO303SP
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 10 V
-1
-2
-3
-4
-5
-6
-7
-8
-10 BSO303SP
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , T
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO303SP
thJS
Preliminary dataBSO303SP
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
30
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.1
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
30
40
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
40
Preliminary dataBSO303SP
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -8.9 A, VGS = -10 V
10
12.5
15
17.5
20
22.5
25
30
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
-60-2020601001600
0.5
1.5
2.5
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO303SP
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
