BSO301SP ,Low Voltage MOSFETsFeatureV-30 VDS• P-ChannelR 8 mΩDS(on)• Enhancement modeI -14.9 AD• Logic Level• 150°C operating te ..
BSO301SP . ,Low Voltage MOSFETsCharacteristicsV -30 - - VDrain-source breakdown voltage(BR)DSSV =0, I =-250µAGS D-1 -1.5 -2Gate th ..
BSO302SN ,Single N-Channel SIPMOS Small-Signal ...Features Product SummaryDrain source voltage 30 VV• Single N channelDSDrain-Source on-s ..
BSO303P ,Low Voltage MOSFETsCharacteristics-30 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =-250µAGS D-1 -1.5 -2Gate th ..
BSO303P . ,Low Voltage MOSFETsFeatureV -30 VDS• Dual P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.2 AD• Logic Level• 150°C operat ..
BSO303SP ,Low Voltage MOSFETsFeatureV -30 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.9 AD• Logic Level• 150°C operating t ..
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BSO301SP-BSO301SP .
Low Voltage MOSFETs
Preliminary dataBSO301SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Logic Level
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Preliminary dataBSO301SP
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Preliminary dataBSO301SP
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO301SP
1 Power dissipationtot = f (TA)
0.4
0.8
1.2
1.6
2.4
3.2 BSO301SP
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 10 V
-2
-4
-6
-8
-10
-12
-16 BSO301SP
3 Safe operating areaD = f ( V
parameter : D = 0 , T
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
BSO301SP
thJS
Preliminary dataBSO301SP
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C
10
15
20
25
30
35
40
50
-
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
10
12
14
16
20
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
-5
-10
-15
-20
-30
8 Typ. forward transconductancefs = f(ID)
parameter: T = 25 °C
10
20
30
40
50
60
80
Preliminary dataBSO301SP
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -14.9 A, VGS = -10 V
10
on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
-0.5
-1
-1.5
-2.5
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO301SP
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz, T10 10 10
