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Partno	Mfg	Dc	Qty	Available	Descript
BSO211P	INFINEON	N/a	80	avai	Low Voltage MOSFETs
BSO211P . \|BSO211P	Infineon	N/a	1080	avai	Low Voltage MOSFETs

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BSO211P-BSO211P .
Low Voltage MOSFETs
Preliminary dataBSO211P
OptiMOS-P Small-Signal-TransistorProduct Summary
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO211P
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO211P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO211P
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSO211P
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5.5
BSO211P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO211P
thJS
Preliminary dataBSO211P
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
25
30
40
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.1
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
12
14
16
20
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
12
14
16
20
gfs
Preliminary dataBSO211P
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -4.7 A, VGS = -4.5 V
30
40
50
60
70
80
100
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.6
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO211P
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10

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