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BSO203P
Low Voltage MOSFETs
Preliminary dataBSO203P
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO203P
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO203P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO203P
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSO203P
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-1
-2
-3
-4
-5
-6
-7
-8
-10
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , T
-2 -10
-1 -10 -10 -10 -10
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSO203P
thJS
Preliminary dataBSO203P
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
90
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.005
0.01
0.015
0.02
0.03
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
35
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
60
Preliminary dataBSO203P
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -8.2 A, VGS = -4.5 V
12
14
16
18
20
22
24
26
30
on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -100 µA
0.2
0.4
0.6
0.8
1.4
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO203P
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz10 10 10
