BSO201SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 8 mΩDS(on)• Enhancement modeI -14.9 AD• Super Logic Level (2.5 V rated ..
BSO201SP . ,Low Voltage MOSFETsCharacteristics-20 - - VDrain-source breakdown voltage V(BR)DSSV =0, I =-250µAGS D-0.6 -0.9 -1.2Gat ..
BSO203P ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -8.2 AD• Super Logic Level (2.5 V rated ..
BSO203SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 21 mΩDS(on)• Enhancement modeI -9 AD• Super Logic Level (2.5 V rated)• ..
BSO204P ,Low Voltage MOSFETsFeatureV -20 VDS• Dual P-ChannelR 30 mΩDS(on)• Enhancement modeI -7 AD• Super Logic Level (2.5 V ra ..
BSO207P ,Low Voltage MOSFETsFeatureV -20 VDS• Dual P-ChannelR 45 mΩDS(on)• Enhancement modeI -5.7 AD• Super Logic Level (2.5 V ..
BZG03-C43 ,Voltage regulator diodes
BZG03-C43 ,Voltage regulator diodes
BZG03C47 ,Voltage regulator diodes
BZG03-C47 ,Voltage regulator diodes
BZG03C51 ,Voltage regulator diodes
BZG03-C51 ,Voltage regulator diodes
BSO201SP-BSO201SP .
Low Voltage MOSFETs
Preliminary dataBSO201SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSO201SP
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSO201SP
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSO201SP
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
BSO201SP
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-2
-4
-6
-8
-10
-12
-16 BSO201SP
3 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T0
-5 10
-4 10
-3 10
-2 10
-1 10 10 10
BSO201SP
thJS
4 Safe operating areaD = f ( V
parameter : D = 0 , T
-1 -10 -10 -10 -10
Preliminary dataBSO201SP
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
90
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.05
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
10
15
20
25
35
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
10
20
30
40
50
60
70
80
90
100
Preliminary dataBSO201SP
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -14.9 A, VGS = -4.5 V
10
12
on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -250 µA
0.2
0.4
0.6
0.8
1.2
1.6
GS(th)
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSO201SP
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz10 10
