BSO150N03 ,Low Voltage MOSFETscharacteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DGate threshold v ..
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BSO150N03-BSO150N03 .
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
BSO150N03
optiMosh Power-Transistor
Product Summary
Features VDS 30 V
. Fast switchin MOSFET for SMPS
g RDS(on),max 15 m9
. Optimized technology for notebook DC/DC
l 9.1 A
. Qualified according to JEDEC1 for target applications
. Dual n-channel
. Logic level
. Excellent gate charge x RDSM product (FOM) P-DSO-8
. Very low on-resistance R DS(on)
. Avalanche rated
. dv/dt rated
Type Package Ordering Code Marking :1; $39}; I: ll
BSO150N03 P-DSO-8 Q67042-S4215 150N3 S23 ”;;I '6 D2
G24 kd " S D2
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
10 secs steady state
Continuous drain current ID TA=25 002) 9.1 7.6 A
TA=7O oc2) 7.3 6.1
Pulsed drain current I Mum TA=25 °C3) 36
Avalanche energy, single pulse EAS /D=9.1 A, Rss--25 f2 82 m]
10:9.1 A, VDS=20 V,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Tj,max=150 °C
Gate source voltage VGS $20 V
Power dissipation Ptot TA=25 oc') 2.0 1.4 W
Operating and storage temperature Tj, Tsta -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.11 page 1 2004-02-09
CP""''"
Infineon
lechnologies
BSO150N03
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point Rmos - - 50 KAN
Thermal resistance, R minimal footprint, - - 110
junction - ambient thJA tps10 s
minimal footprint, - - 150
steady state
6 cm2 cooling area'", - - 63
tps10 s
6 cm2 cooling areaz), - - 90
steady state
Electrical characteristics, at Tr=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=O V, I D=1 mA 30 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=25 pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T3825 0 C GS - 0.1 1 HA
VDS=30 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Roswn, VGS=4.5 V, I D=8.4 A - 15.2 19 m9
Vss=10 V, ID=9.1 A - 12.5 15
Gate resistance Rs - 1.5 - 9
V >2 I R ,
Transconductance " I PSI I DI DS(on)max 13 26 - S
1--9.1 A
“J-STDZO and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev.1.11
page 2
