BSO119N03S ,Low Voltage MOSFETsDynamic characteristicsInput capacitance C - 1300 1730 pFissV =0 V, V =15 V, GS DSCOutput capacitan ..
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BSO150N03MD G , OptiMOS™3 M-Series Power-MOSFET
BSO150N03MDG , OptiMOS™3 M-Series Power-MOSFET
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BSO119N03S
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
optiMosh Power-Transistor
Features
. Fast switching MOSFET for SMPS
. Optimized technology for notebook DC/DC
. Qualified according to JEDEC1 for target applications
. N-channel
. Logic level
. Excellent gate charge x RDSM product (FOM)
. Very low on-resistance R DS(on)
. Avalanche rated
. dv/dt rated
BSO119N03S
Product Summary
V03 30 V
R DS(on),max 1 1.9 m9
l 11 A
Type Package
Ordering Code Marking
BSO119N03S P-DSO-8
Q67042-S421 1 1 19N3S
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
10 secs steady state
Continuous drain current ID TA=25 002) 11 9.0 A
TA=7O oc2) 9.1 7.2
Pulsed drain current I Mum TA=25 °C3) 44
Avalanche energy, single pulse EAS /D=11 A, RGS=25 Q 58 m]
10:11 A, Vos=20 v,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Tj,max=150 °C
Gate source voltage VGS $20 V
Power dissipation Ptot TA=25 oc') 2.5 1.56 W
Operating and storage temperature Tj, Tsta -55 ... 150 'C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.11 page 1 2004-02-09
CP""''"
Infineon
lechnologies
BSO119N03S
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point Rmos - - 35 KAN
Thermal resistance, R minimal footprint, - - 110
junction - ambient thJA tps10 s
minimal footprint, - - 150
steady state
6 cm2 cooling area'", - - 5O
tps10 s
6 cm2 cooling areaz), - - 80
steady state
Electrical characteristics, at Tr=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=O V, I D=1 mA 30 - - V
Gate threshold voltage Vsath) VDS=VGS, ID=25 pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T3825 0 C GS - 0.1 1 HA
VDS=30 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance Roswn, VGS=4.5 V, I 0:1 0 A - 13 16.3 mg
Vss=10V,lo=11 A - 9.9 11.9
Gate resistance Rs - 0.9 - 9
V >2 I R ,
Transconductance " ll Bil Al DI DS(on)max 15 30 - S
“J-STDZO and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3
Rev.1.11
page 2
