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BSL211SP
Low Voltage MOSFETs
Preliminary dataBSL211SP
OptiMOS
-P Small-Signal-TransistorProduct Summary
Feature• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
P-TSOP6-6
Preliminary dataBSL211SP
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSL211SP
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSL211SP
1 Power dissipationtot = f (TA)
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
BSL211SP
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5.5
BSL211SP
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10 -10
BSL211SP
4 Transient thermal impedancethJS = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
BSL211SP
thJS
Preliminary dataBSL211SP
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
10
15
20
30
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.025
0.05
0.075
0.1
0.125
0.15
0.2
on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x|ID| x RDS(on)max
parameter: tp = 80 µs
12
16
20
24
32
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: tp = 80 µs
12
15
18
24
Preliminary dataBSL211SP
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -4.7 A, VGS = -4.5 V
40
50
60
70
90
DS(on)
10 Gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS, ID = -25 µA
0.2
0.4
0.6
0.8
1.4
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-1 -10 -10 -10 -10
BSL211SP
