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BSH202
P-channel vertical D-MOS logic level FET
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA• Low threshold voltage VDS = -30 V
• Fast switching
• Logic level compatible ID = -0.52 A
• Subminiature surface mount
package RDS(ON) ≤ 0.9 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode,
PIN DESCRIPTIONlogic level, field-effect power
transistor. This device has low 1 gate
threshold voltage and extremely
fast switching makingit ideal for 2 source
battery powered applications and
high speed digital interfacing. 3 drain
The BSH202is suppliedin the
SOT23 subminiature surface
mounting package.
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDS Drain-source voltage - -30 V
VDGR Drain-gate voltage RGS = 20 kΩ - -30 V
VGS Gate-source voltage - ± 20 V Drain current (DC) Ta = 25 ˚C - -0.52 A
Ta = 100 ˚C - -0.33 A
IDM Drain current (pulse peak value) Ta = 25 ˚C - -2.1 A
Ptot Total power dissipation Ta = 25 ˚C - 0.417 W
Ta = 100 ˚C - 0.17 W
Tstg, Tj Storage & operating temperature - 55 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNITth j-a Thermal resistance junction to FR4 board, minimum 300 - K/W
ambient footprint
2
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = -10 μA -30 - - V
voltage
VGS(TO) Gate threshold voltage VDS = VGS; ID = -1 mA -1 -1.9 - V
Tj = 150˚C -0.4 - - V
RDS(ON) Drain-source on-state VGS = -10 V; ID = -280 mA - 0.63 0.9 Ω
resistance VGS = -4.5 V; ID = -140 mA - 0.89 1.35 Ω
VGS = -10 V; ID = -280 mA; Tj = 150˚C - 0.95 1.35 Ω
gfs Forward transconductance VDS = -24 V; ID = -280 mA 0.2 0.7 - S
IGSS Gate source leakage current VGS = ±20 V; VDS = 0 V - ±10 ±100 nA
IDSS Zero gate voltage drain VDS = -24 V; VGS = 0 V; - -50 -100 nA
current Tj = 150˚C - -0.4 -10 μA
Qg(tot) Total gate charge ID = -0.3 A; VDD = -15 V; VGS = -10 V - 2.9 - nC
Qgs Gate-source charge - 0.4 - nC
Qgd Gate-drain (Miller) charge - 0.5 - nC
td on Turn-on delay time VDD = -15 V; ID = -0.5 A; - 2 - ns Turn-on rise time VGS = -10 V; RG = 6 Ω - 4.5 - ns
td off Turn-off delay time Resistive load - 45 - ns Turn-off fall time - 20 - ns
Ciss Input capacitance VGS = 0 V; VDS = -24 V; f = 1 MHz - 80 - pFoss Output capacitance - 27 - pFrss Feedback capacitance - 9 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICSj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain Ta = 25 ˚C - - -0.56 A
current
IDRM Pulsed reverse drain current - - -2.2 A
VSD Diode forward voltage IF = -0.5 A; VGS = 0 V - -0.87 -1.3 V
trr Reverse recovery time IF = -0.5 A; -dIF/dt = 100 A/μs; - 30 - ns
Qrr Reverse recovery charge VGS = 0 V; VR = -24 V - 28 - nC
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Ta)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Ta); conditions: VGS ≤ -10 V
Fig.3. Safe operating area. Ta = 25 ˚C
Fig.4. Transient thermal impedance.
Zth j-a = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
Normalised Power Dissipation, PD (%)
120 25 50 75 100 125 150
Ambient Temperature, Ta (C)
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
Normalised Drain Current, ID (%)
120 25 50 75 100 125 150
Ambient Temperature, Ta (C)
BSH202
Drain-Source Voltage, VDS (V)
Drain current, ID (A)
BSH202
0.1 1 10 100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
BSH202
-1.4-1.2-1-0.8-0.6-0.4-0.20 Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Fig.9. Normalised drain-source on-state resistance.
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
Fig.12. Typical capacitances, Ciss, Coss, Crss.
BSH202
Gate-Source Voltage, VGS (V)
Drain Current, ID (A) Threshold Voltage, VGS(to), (V)
1.8 25 50 75 100 125 150
Junction Temperature, Tj (C)
BSH202
Drain Current, ID (A)
Transconductance, gfs (S)
BSH202
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
-2.5 -2 -1.5 -1
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
Normalised Drain-Source On Resistance
1.81.9 25 50 75 100 125 150
Junction Temperature, Tj (C)
BSH202
-0.1 -1.0 -10.0 -100.0
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
BSH202-14
Gate charge, (nC)
Gate-source voltage, VGS (V)
BSH202
3.5 0.5 1 1.5 2
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Philips Semiconductors Product specification
P-channel enhancement mode BSH202
MOS transistor
MECHANICAL DATA
Fig.15. SOT23 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
Plastic surface mounted package; 3 leads SOT23
