BSH111 ,N-channel enhancement mode field-effect transistorBSH111N-channel enhancement mode field-effect transistorRev. 02 — 26 April 2002 Product dataM3D0881. ..
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BSH111
N-channel enhancement mode field-effect transistor
BSH111N-channel enhancement mode field-effect transistor
Rev. 02 — 26 April 2002 Product dataM3D088
DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
BSH111 in SOT23.
Features TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package.
Applications Battery management High speed switch Logic level translator.
Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 source (s) drain (d)
MSB003Top view
MBB076
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 55 V drain current (DC) Tsp =25 °C; VGS= 4.5V - 335 mA
Ptot total power dissipation Tsp =25°C - 0.83 W junction temperature - 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 500 mA 2.3 4.0 Ω
VGS= 2.5 V; ID=75 mA 2.4 5.0 Ω
VGS= 1.8 V; ID=75 mA 3.1 8.0 Ω
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 55 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -55 V
VGS gate-source voltage - ±10 V drain current (DC) Tsp =25 °C; VGS= 4.5V;
Figure2 and3 335 mA
Tsp= 100 °C; VGS= 4.5V; Figure2 - 212 mA
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs;
Figure3 1.3 A
Ptot total power dissipation Tsp =25 °C; Figure1 - 0.83 W
Tstg storage temperature −65 +150 °C junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 335 mA
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs - 1.3 A
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to
solder point
mounted on metal clad
substrate; Figure4 - 150 K/W
Rth(j-a) thermal resistance from junction to
ambient
minimum footprint; mounted on
printed circuit board 350 - K/W
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25 °C55 75 - V= −55 °C50 - - V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25°C 0.4 1.0 1.3 V= 150°C 0.3 - - V= −55°C - - 2.5 V
IDSS drain-source leakage current VDS=44 V; VGS =0V =25°C - 0.01 1.0 μA= 150 °C- - 10 μA
IGSS gate-source leakage current VGS=±8 V; VDS=0V - 10 100 nA
RDSon drain-source on-state
resistance
VGS= 2.5 V; ID =75mA;
Figure7 and8 =25°C - 2.4 5 Ω= 150°C - - 7.4 Ω
VGS= 4.5 V; ID= 500 mA;
Figure7 and8 =25°C - 2.3 4 Ω
VGS= 1.8 V; ID =75mA;
Figure7 and8 =25°C - 3.1 8 Ω
Dynamic characteristicsgfs forward transconductance VDS=10 V; ID= 200 mA;
Figure11
100 380 - mS
Qg(tot) total gate charge ID= 0.5 A; VDS =44V;
VGS =8V; Figure14 1.0 - nC
Qgs gate-source charge - 0.05 - nC
Qgd gate-drain (Miller) charge - 0.5 - nC
Ciss input capacitance VGS =0V; VDS =10V;=1 MHz; Figure12
-17 40 pF
Coss output capacitance - 7 30 pF
Crss reverse transfer capacitance - 4 10 pF
ton turn-on time VDD=50 V; RD= 250Ω;
VGS =10V; RG =50Ω;
RGS =50Ω 4 10 ns
toff turn-off time - 11 15 ns
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor
Source-drain diodeVSD source-drain (diode forward)
voltage= 300 mA; VGS =0V;
Figure13 0.95 1.5 V
trr reverse recovery time IS= 300 mA;
dIS/dt= −100 A/μs;
VGS =0V; VDS =25V
-30 - ns recovered charge - 30 - nC
Table 5: Characteristics…continued =25 °C unless otherwise specified
Philips Semiconductors BSH111
N-channel enhancement mode field-effect transistor
