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BSH108
N-channel enhancement mode field-effect transistor
BSH108N-channel enhancement mode field-effect transistor
Rev. 02 — 25 October 2000 Product specificationM3D088
DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
BSH108 in SOT23.
Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
Applications Battery management High speed switch Low power DC to DC converter.
Pinning information TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 source (s) drain (d)
MSB003Top view
MBB076
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C − 30 V drain current (DC) Tsp =25 °C; VGS =5V − 1.9 A
Ptot total power dissipation Tsp =25°C − 0.83 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS=10 V; ID=1A 77 120 mΩ
VGS =5V; ID=1A 102 140 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 30 V
VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 30 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tsp =25 °C; VGS =5V; Figure2 and3 − 1.9 A
Tsp= 100 °C; VGS =5V; Figure2 − 1.2 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 − 7.5 A
Ptot total power dissipation Tsp =25 °C; Figure1 − 0.83 W
Tstg storage temperature −65 +150 °C operating junction temperature −65 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C − 0.83 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs − 3.3 A
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure4 150 K/W
Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;
minimum footprint
350 K/W
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID =10 μA; VGS =0V =25 °C30 40 − V= −55 °C27 −− V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 1 1.5 2 V= 150°C 0.5 −− V= −55°C −− 3.2 V
IDSS drain-source leakage current VDS =24V; VGS =0V =25°C − 0.01 1.0 μA= 150°C −− 10 μA
IGSS gate-source leakage current VGS= ±10 V; VDS =0V − 10 100 nA
RDSon drain-source on-state resistance VGS=10 V; ID =1A; Figure7 and8 =25°C − 77 120 mΩ
VGS =5V; ID =1A; Figure7 and8 =25°C − 102 140 mΩ= 150°C − 170 240 mΩ
Dynamic characteristicsgfs forward transconductance VDS =10V; ID =1A; Figure11 2 4.5 − S
Qg(tot) total gate charge VDD =15V; VGS =10V; ID =5A; Figure14 − 6.4 10 nC
Qgs gate-source charge − 0.5 − nC
Qgd gate-drain (Miller) charge − 1.3 − nC
Ciss input capacitance VGS =0V; VDS=10 V; f=1 MHz; Figure12 − 190 − pF
Coss output capacitance − 70 − pF
Crss reverse transfer capacitance − 50 − pF
td(on) turn-on delay time VDD =10V; RL =10 Ω; VGS =10V; RG =6 Ω− 3 − ns rise time − 8 − ns
td(off) turn-off delay time − 15 − ns fall time − 26 − ns
Source-drain diodeVSD source-drain (diode forward) voltageIS= 0.83 A; VGS =0V; Figure13 − 0.8 1.2 V
trr reverse recovery time IS=1 A; dIS/dt= −100 A/μs; VGS =0V;
VDS =25V 25 − ns recovered charge − 20 − nC
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor
Philips Semiconductors BSH108
N-channel enhancement mode field-effect transistor
