BSH107 ,N-channel enhancement mode MOS transistor
BSH108 ,N-channel enhancement mode field-effect transistorBSH108N-channel enhancement mode field-effect transistorRev. 02 — 25 October 2000 Product specificati ..
BSH111 ,N-channel enhancement mode field-effect transistorBSH111N-channel enhancement mode field-effect transistorRev. 02 — 26 April 2002 Product dataM3D0881. ..
BSH121 ,N-channel TrenchMOS extremely low level FETApplications■ Battery management■ High speed switchcc■ Logic level translator.4. Pinning informatio ..
BSH121 ,N-channel TrenchMOS extremely low level FETApplications■ Battery management■ High speed switchcc■ Logic level translator.4. Pinning informatio ..
BSH201 ,P-channel vertical D-MOS logic level FET
BZD27C12P ,Discrete Devices -Diode-Zener Diode & ArrayRev. 1.8, 13-Apr-05 3BZD27C3V6P to BZD27C200PVishay SemiconductorsTypical Characteristics (Tamb = 2 ..
BZD27-C130 ,Voltage regulator diodes
BZD27C13P ,Discrete Devices -Diode-Zener Diode & ArrayElectrical CharacteristicsWhen used as voltage regulator diodes (T = 25 °C unless otherwise noted)J ..
BZD27C13P-GS18 , Zener Diodes with Surge Current Specification
BZD27-C15 ,Voltage regulator diodes
BZD27C15P ,Discrete Devices -Diode-Zener Diode & ArrayElectrical CharacteristicsWhen used as voltage regulator diodes (T = 25 °C unless otherwise noted)J ..
BSH107
