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BSH103
N-channel enhancement mode MOS transistor
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor BSH103
FEATURES Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc.
APPLICATIONS Power management DC to DC converters Battery powered applications ‘Glue-logic’; interface between logic blocks and/or
periphery General purpose switch.
DESCRIPTIONN-channel enhancement mode MOS transistor in a SOT23
SMD package.
PINNING - SOT23
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor BSH103
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Notes Ts is the temperature at the soldering point of the drain lead. Pulse width and duty cycle limited by maximum junction temperature. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W.
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor BSH103
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor BSH103
CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
N-channel enhancement mode
MOS transistor BSH103
