Home ›  B › B27 > BSD223P,Low Voltage MOSFETs

BSD223P Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BSD223P	INFINEON	N/a	9000	avai	Low Voltage MOSFETs

BSD223P ,Low Voltage MOSFETsFeatureV -20 VDS• Dual P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V ..
BSH101 ,N-channel enhancement mode MOS transistor
BSH102 ,N-channel enhancement mode MOS transistor
BSH102 ,N-channel enhancement mode MOS transistor
BSH102 ,N-channel enhancement mode MOS transistor
BSH103 ,N-channel enhancement mode MOS transistorDISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageM3D088BSH103N-channel enhancement modeMOS transis ..
BZD23-C47 ,Voltage regulator diodes
BZD23C56 ,Voltage regulator diodes
BZD23C56 ,Voltage regulator diodes
BZD23-C56 ,Voltage regulator diodes
BZD23-C56 ,Voltage regulator diodes
BZD23C5V1 ,Voltage regulator diodes

---

BSD223P
Low Voltage MOSFETs
Preliminary dataBSD 223P
OptiMOS-P Small-Signal-TransistorProduct Summary
Feature
• Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Preliminary dataBSD 223P
Thermal Characteristics
Characteristics
Static Characteristics
Preliminary dataBSD 223P
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
Preliminary dataBSD 223P
1 Power dissipationtot = f (TA)
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
BSD 223P
tot
2 Drain currentD = f (TA)
parameter: |VGS|≥ 4.5 V
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
-0.42 BSD 223P
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10
4 Transient thermal impedancethJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSD 223P
thJA
Preliminary dataBSD 223P
5 Typ. output characteristicD = f (VDS)
parameter: Tj =25°C
0.1
0.2
0.3
0.4
0.5
0.7
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.5
1.5
2.5
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
8 Typ. forward transconductancefs = f(ID)
parameter: T = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
Preliminary dataBSD 223P
9 Drain-source on-resistanceDS(on) = f(Tj)
parameter: ID = -0.39 A, VGS = -4.5 V
0.2
0.4
0.6
0.8
1.2
1.6
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.6
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T
-2 -10
-1 -10 -10 -10
BSD 223P

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED