BSA223SP Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B26 > BSA223SP,Low Voltage MOSFETs

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BSA223SP	INFINEON	N/a	3000	avai	Low Voltage MOSFETs

BSA223SP ,Low Voltage MOSFETsFeatureV -20 VDS• P-ChannelR 1.2 ΩDS(on)• Enhancement modeI -0.39 AD• Super Logic Level (2.5 V rate ..
BS-A405RD , SINGLE DIGIT LED DISPLAYS
BS-A506RD , 12.70 (0.50) high single digit seven segments display
BS-A514RD , 14.2mm(0.56) high single digit seven segments display.
BS-A514RD , 14.2mm(0.56) high single digit seven segments display.
BS-A515RD , 14.20mm (0.56) high single digit seven segments display.
BYV36D ,Fast soft-recovery controlled avalanche rectifiers
BYV36E ,Fast soft-recovery controlled avalanche rectifiers
BYV36E ,Fast soft-recovery controlled avalanche rectifiers
BYV36E ,Fast soft-recovery controlled avalanche rectifiers
BYV36F ,Fast soft-recovery controlled avalanche rectifiers
BYV36F ,Fast soft-recovery controlled avalanche rectifiers

BSA223SP
Low Voltage MOSFETs
OptiMOSÒ-P Small-Signal-TransistorProduct Summary
Feature
· P-Channel
· Enhancement mode
· Super Logic Level (2.5 V rated)
· 150°C operating temperature
· Avalanche rated
· dv/dt rated
SC-75
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipation
Ptot = f (TA)
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.55
BSA 223SP
tot
2 Drain current
ID = f (TA)
parameter: |VGS|³ 4.5 V
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
-0.42 BSA 223SP
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-2 -10
-1 -10 -10 -10
BSA 223SP
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
BSA 223SP
thJA
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C
0.1
0.2
0.3
0.4
0.5
0.7
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS, Tj = 25 °C
0.5
1.5
2.5
DS(on)
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|³ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.7
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -0.39 A, VGS = -4.5 V
0.2
0.4
0.6
0.8
1.2
1.6
DS(on)
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
0.2
0.4
0.6
0.8
1.2
1.6
GS(th)
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C10 10
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj = 25 °C
-2 -10
-1 -10 -10 -10
BSA 223SP

TEL:86-533-2716050 FAX:86-533-2716790