BS270 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
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BS270
N-Channel Enhancement Mode Field Effect Transistor
April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors 400mA, 60V. R = 2W @ V = 10V. DS(ON) GS are produced using Fairchild's proprietary, high cell density, High density cell design for low R . DS(ON) DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, Voltage controlled small signal switch. and fast switching performance. They can be used in most Rugged and reliable. applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such High saturation current capability. as small servo motor control, power MOSFET gate drivers, and other switching applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter BS270 Units V Drain-Source Voltage 60 V DSS V 60 V Drain-Gate Voltage (R < 1MW) DGR GS V Gate-Source Voltage - Continuous V GSS ±20 - Non Repetitive (tp < 50µs) ±40 I Drain Current - Continuous 400 mA D - Pulsed 2000 P Maximum Power Dissipation 625 mW D Derate Above 25°C 5 mW/°C T ,T Operating and Storage Temperature Range -55 to 150 °C J STG Maximum Lead Temperature for Soldering 300 °C T L Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS R Thermal Resistacne, Junction-to-Ambient 200 °C/W JA q © 1997 BS270.SAM
