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BS250-TP0610L-TP0610T-VP0610L-VP0610T
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
VISHAY
TP061OLIT, VP061OLIT, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDston) Max (Q) Vesuh) (V) ID (A)
TP0610L -60 10@Vss=-10V -1 to -2.4 -0.18
TPO61OT -60 10 @ VGS = -10 v -1 to Al.4 -0.12
VP0610L -60 10 @ VGS = -10 v -1 to -3.5 -0.18
VP0610T -60 10 @ VGS = -10 v -1 to -3.5 Ah12
BS250 -60 10 @ VGS = -10 v -1 to -3.5 -0.18
FEATURES BENEFITS APPLICATIONS
o High-Side Switching 0 Ease in Driving Switches 0 Drivers: Relays, Solenoids, Lamps,
. Low On-Resistance: 8 Q q Low Offset (Error) Voltage Hammers, Displays, Memories,
. Low Threshold: -1.9 V o Low-Voltage Operation Transistors, etc.
. Fast Switching Speed: 16 ns q High-Speed Switching . Battery Operated Systems . .
q Low Input Capacitance: 15 pF q Easily Driven 1/Whout Buffer . Power Supply, Converter Circuits
0 Motor Control
TO-226AA Device Malking TO-92-18RM
(TO-92) FrontMew (TO-18 Lead Form)
TO-236
TP0610L Device Marking (SOT-23)
S "S" TP D Front IAew
G rrll G BS250 G 1 Marking Code:
s BS l, E D TP0610T: TOwll
250 VP0610T: VOWII
VP0610L m: 2
D " " S w = Week Code
02124:.) "S" = Siliconix Logo IL = Lot Traceability
xxll = Date Code
Top View w” Top View Top Vew
TP0610L BS250 TP0610T
VP0610L "S" = Siliconix Logo VP061OT
xxll = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol TP061OL TP0610T VP0610L VP061OT BS250 Unit
Drain-Source Voltage VDS Ai0 -E0 -60 -60 -60
Gate-Source Voltage l/ss d: 20 i 20 i 20 i 20 i 20
Continuous Drain Current TA-- 25°C I -0.18 -0.12 Ah18 -0.12 AJ.18
(TJ = 150°C) TA=100°C D -0.11 -0.07 Ah11 -0.07 A
Pulsed Drain Currenta IDM -0.8 -0.4 Ah8 -0.4
TA-- 25°C 0.8 0.36 0.8 0.36 0.83
P Di . ti P W
ower lssma Ion TA-- 100°C D 0.32 0.14 0.32 0.14
Thermal Resistance, Junction-to-Ambient RthJA 156 350 156 350 150 "C/W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
For applications information see AN804.
Document Number: 70209
S-04623-Rev. G, 03-Sep-01
www.vishay.com
TP0610LIT, VP0610LIT, BS250
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
TP061OL/T VP0610LfT BS250
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Drain-Source V BR DSS VGS = 0 V, ID = -10 p1A -60 -60
Breakdown Voltage ( ) VGS = 0 V, ID = -100 11A -60 V
Gate-Threshold Voltage Vegan) VDS = VGS, b = -250 WA -1 -2.4 -1 -3.5 -1 -3.5
Vros--0V,1/Gs=dc10V i200 i200
Gate-Body Leakage less VDS = 0 V, VGS = 110 V, To = 125°C i 500 nA
VDS=0V,VGS=:t5V i100
VDS = -48 V, VGS = o v -1 -1
Zero Gate Voltage = = = o _ -
Drain Current loss VDS -48 V, VGS 0 V, To 125 C 200 200 HA
VDS = -25 V, VGS = O V -0.5
Vros=-10 V, VGs---45V -50
On-State Drain Currentb ID(on) mA
VDS = -10 V, VGS = -10 V Ai00 -600
VGS = -4.5 V, ID = -25 mA 25
Drain-Source r S V63: -10 V, ID=-O.5A 10 10 Q
on-Resistancep D (on) VGS = -10 v, ID = -0.5 A, T J = 125°C 20 20
VGs=-10 V,ID=-0.2A 10 IO 14
Forward Transconductanceb gfs Vros = -10 V, ID = -0.5 A 20 80 ms
Diode Forward Voltage VSD ls = -0.5 A, VGS = O V -1.1 -1.4 V
Dynamic
Input Capacitance Ciss 23 60 60
Output Capacitance Coss Vos = 4:5 hh? = O V 10 25 25 pF
Reverse Transfer Capacitance Crss 5 5 5
Switchinge
Turn-On Time tON VDD = -25 V, RL = 133 Q 20
ID -s-0.18A,VGEN=-10V ns
Turn-OffTIme tOFF RG = 25 Q 35
a. For DESIGN AID ONLY, not subject to production testing. VPDSOG
b. Pulse test: PW $300 115 duty cycle 52%.
C. Switching time is essentially independent of operating temperature.
www.vishay.com
Document Number: 70209
S-04623-Reu G, 03-Sep-01
VISHAY
TP061OLIT, VP061OLIT, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
1.0 I I
Vss = 10 v ,,-''"'"
/ o,..,-''"' 7 v
0.8 8V " s,,,,,---'''''"
tt _ii,sif,i,'';''c'c-'-"''''"
“g 0.6 (f,,?,','''''" 6 v_
3 ----""
.E (f/C,,,,,-----""'-
D 0.4 I
a ',,pp''''''''" 5 v
0.2 /,
0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
a 16 VGS = 4.5 V
.IrLa' 12
g I/c s = 5 V
F,'' ,///
V f = 10 v
fly 4 GS
0 200 400 600 800 1000
ID - Drain Current (mA)
Gate Charge
15 I I od
A ID = 500 mA pd"
5 12 2
oi).' VDs = 30 v ,,d'f,
> / N/ros = 48 v
(D -,---'''"
0.0 0.3 0.6 0.9 1.2 1.5 1.8
09 - Total Gate Charge (nC)
rDS(on) — On—Resistance( 52)
I D — Drain Current (mA)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
T J = -55c'C
ys \ 25°C
0 2 4 6 8 10
Vss - Gate-to-Source Voltage (V)
Capacitance
GS = 0 V
_ C rss
0 5 IO 15 20 25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
v,,,-'''''''
r..--''''''
VGS =10V@500
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
Document Number: 70209
S-04623-Reu. G, 03-Sep-01
www.vishay.com
TP0610LIT, VP0610LIT, BS250 VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
1000 10
VGS = 0 V
A 8 ID = 500 mA -
Ci.:] 100 Cl
tij, 8 6
'r, T = 125°C fsi,
'k' g'
fl t 4 'ss
I 10 \TJ=25°C I k3=200mA "m----,...
T J = -55''C ffl
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
V39 - Source-to-Drain Voltage (V) VGs - Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient
ID = 250 " /" 2.5
A 0.3 / \
g 0.2 /
g www''" g
y 0.1 ",,,w'' tg 1.5 t
g'," " t )
8 -0 o \
> 1 1 T 25 C
-0 1 7/ 'ts,, A -
-0 2 ‘N
h. a'....
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
T J - Junction Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.1 -T-
‘1: [,-cd
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 350°CIW
Thermal Impedance
Normalized Effective Transient
3. TJM - TA = PoMirtruA(t)
4. Surface Mounted
Single Pulse
IO-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70209
11.4 S-04623-Reu G, 03-Sep-01
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