BS108ZL1 ,Small Signal MOSFET 250 mAmps, 200 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BS108ZL1G , Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
BS112 , WIDE WAVELENGTH BAND TYPE PHOTODIODE
BS128HD9V , 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
BS170 ,Enhancement-Mode MOSFET TransistorsS-04279—Rev. F, 16-Jul-0111-4V – Gate-to-Source Voltage (V) r – On-Resistance ( Ω ) I – Drain Curre ..
BS170FTA , N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
BYM36E ,Fast soft-recovery controlled avalanche rectifiers
BYM36E ,Fast soft-recovery controlled avalanche rectifiers
BYM36E ,Fast soft-recovery controlled avalanche rectifiers
BYM36E ,Fast soft-recovery controlled avalanche rectifiers
BYM36F ,Fast soft-recovery controlled avalanche rectifiers
BYM36F ,Fast soft-recovery controlled avalanche rectifiers
BS108ZL1
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
BS108
Preferred DeviceSmall Signal MOSFET
250 mAmps, 200 Volts, Logic
Level
N–Channel TO–92This MOSFET is designed for high voltage, high speed switching
applications such as line drivers, relay drivers, CMOS logic,
microprocessor or TTL to high voltage interface and high voltage
display drivers. Low Drive Requirement, VGS = 3.0 V max Inherent Current Sharing Capability Permits Easy Paralleling of
many Devices
MAXIMUM RATINGS The Power Dissipation of the package may result in a lower continuous drain
current. Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%.
