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BS107-VN2010L
Enhancement-Mode MOSFET Transistors
VISHAY
VN2010LIBS107
Vishay Siliconix
N-Channel 200-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (Q) VGS(th) (V) ID (A)
VN2010L 10@VGS=4.5V 0.19
BS107 200 28@Vcs=2.8V 0.12
. Low On-Resistance: 6 Q . Low Offset Voltage q High-Voltage Drivers: Relays, Solenoids,
. Secondary Breakdown Free: 220 v . Full-Voltage Operation Lamps, Hammers, Displays, Transistors, etc.
. Low PowerNoltage Driven . Easily Driven 1/Nhthout Buffer q Telephone Mute Switches, Ringer Circuits
0 Low Input and Output Leakage q Low Error Voltage q Power Supply, Converters
. Excellent Thermal Stability o No High-Temperature 0 Motor Control
"Run-Away"
T0-226AA T0-92-18RM
(T0-92) (TO-18 Lead Form)
s Device Marking D Device Marking
Front View Front View
"S" VN "S" BS
G 2010L G 107
xxyy XXYY
D "S" = Siliconix Logo S "S" = Siliconix Logo
xxyy= Date Code xxyy= Date Code
Top View Top Vew
VN201OL BS107
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol VN2010L BS107 Unit
Drain-Source Voltage VDs 200 200 V
Gate-Source Voltage VGS i 30 l 25
TA-- 25''C 0.19 0.12
Continuous Drain Current (T: = 150°C) ID
TA-- 100°C 0.12 A
Pulsed Drain Currenta IBM 0.8
TA-- 25°C 0.8 0.5
Power Dissipation PD W
TA-- 100°C 0.32
Thermal Resistance, Junction-to-Ambient RthJA 156 250 "CAN
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70215
S-04279-Rev. C, 16-Jul-01
www.vishay.com
VN2010L/BS107
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VN2010L BS107
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 ”A 220 200 200
Gate-Threshold Voltage VGSm Vos = VGs, ID = 1 mA 1.2 0.8 1.8 0.8 3
VDs=0V,VGs= I20V $10
Gate-Bod Leaka e I nA
y g GSS vDS=ov,vGS= i15V $10
Drain Leakage Current 'DSV V03 = 70 V, VGS = 0.2 V 1
VDs = 130 V, VGS = 0 V 0.03
Zero Gate Voltage Drain Current bss Vos = 160 V, VGs = 0 V 1 Pl
T: = 125°C 100
On-State Drain Currentb 'D(on) Vos = 10 V, VGS = 10 V (h7 0.1 A
sz = 2.8 V, ID = 0.02 A 6 28
Drain-Source On-Resistanceb rDS(0n) VGS = 4.5 V, b = 0.05 A 6 10 Q
To = 125°C 11 20
Forward Transconductancdo git VDS = 15 V, ID = th1 A 180 125
Common Source - - mS
Output Conductanceb Jos Vros - 15 V, ID - 0.05 A 0.15
Dynamic
Input Capacitance Ciss 35 60
Output Capacitance Coss Vos =25 V, VGS = 0 V, f= 1 MHz 9 30 pF
Reverse Transfer Capacitance Crss 1 15
Switching"
Turn-On Time tON VDD = 25 V, RL = 250 Q 5 20
IDEO.1A,VGEN=10V ns
Turn-OffTIme 10FF Rs = 25 Q 21 30
a. For DESIGN AID ONLY, not subject to production testing. VNDQ20
b. Pulse test: PW s300 us duty cycle 52%.
C. Switching time is essentially independent of operating temperature.
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DocumentNumber: 70215
S-04279-Rev. C, 16-Jul-01
VISHAY
VN2010LIBS107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
0.5 ' '
VGS = 10 v '','V''fv
0.4 l, 4 V
tij.] /p,ftje''''''''' 6 V
‘05, 0.3 r V
'g "pt,",' 3 v
D 0.2 gf,'
sf" 2 v
0 1 2 3 4 5
I/os - Drain-to-Source Voltage (V)
Transfer Characteristics
500 I I V
V = 15 V Ct
DS To=-55l / 25 C
I 125°C
E 200 /
0 ",.,,,,/''
0 1 2 3 4 5
Vas - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
g 10.0
.9, '.,,,w'"
il:'' Vss = 10 v we-''''''
' 7.5 I
6 w..,,,...---'''"
bl o.....---''
s.'.?',
0 0.2 0.4 0.6 0.8 1.0
ID - Drain Current (A)
ID — Drain Current (mA)
I’Ds(on) — On-Resistance ( Q )
rDS(on) — Drain-Source On-Resistance ( (2)
(Normalized)
Output Characteristics for Low Gate Drive
VGS = 2.2 V
0.4 0.8 1.2 1.6
l/us - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
T, - Junction Temperature (°C)
0 4 8 12 16 20
VGS - Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
- VGS = 4.5 V /
ID = 50 mA/
of' 10 mA
-50 -10 30 70 110
DocumentNumber: 70215
S-04279-Rev. C, 16-Jul-01
www.vishay.com
VN2010L/BS107 VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Threshold Region Capacitance
VGS, = ov
50 - f = 1 MHz
a" A c.
g L5; 40 155
it' g a'.--.-,
8 .51; 30
(i, fir \Coss
I I 20
_D O N,
10 Crss _
-55''C
0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50
Vss - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
Gate Charge Load Condition Effects on Switching
Vor, = 25 V
Rs = 25 Q
A 12.5 - |D=0.1A Vss=0to10V
'l,'' 10.0 VDs =100V
g 7.5 160 V
fl,. 5.0
f' 2.5
0 250 500 750 1000 1250 0.01 0.1 1.0
Qg - Total Gate Charge (pC) ID - Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA)
Duty Cycle = 0.5
Notes:
-5 11 _
Thermal Impedance
l. Duty Cycle, D = i,
_ 0 01 2. Per Unit Base = RNA =156°CNV
3. TJM - TA = PDMZthoA(t)
Normalized Effective Transient
Single Pulse
0.1 1 10 100 1K 10K
t1 - Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70215
11-4 S-04279-Rev. C, 16-Jul-01
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