BQ4015YMA-85 ,512Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BQ4015YMA-85 ,512Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BQ4285EP ,RTC IC With 114x8 NVSRAM and NVSRAM Control, Alarm Wake-up 3V Op on L Version
BQ4285EP ,RTC IC With 114x8 NVSRAM and NVSRAM Control, Alarm Wake-up 3V Op on L Version
BQ4285S-SB2 ,RTC IC With 114x8 NVSRAM and NVSRAM Control
BQ4287MT-SB2 ,RTC Module With 114x8 NVSRAM and NVSRAM Control
BUZ80A. ,Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220ELECTRICAL CHARACTERISTICS(Tcase =25 C unless otherwisespecified)OFFSymbol Parameter Test Condition ..
BUZ80FI ,NBUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V < 4 Ω ..
BUZ81 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90A ,Power MOSFETCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = 25 °C 600 - -GS ..
BUZ90A ,Power MOSFETCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max.
BQ4015YMA-85
512Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
