BQ4014MB-120 ,256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance
BQ4014MB-85 ,256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance
BQ4015YMA-85 ,512Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BQ4015YMA-85 ,512Kx8 Nonvolatile SRAM, 10% Voltage Tolerance
BQ4285EP ,RTC IC With 114x8 NVSRAM and NVSRAM Control, Alarm Wake-up 3V Op on L Version
BQ4285EP ,RTC IC With 114x8 NVSRAM and NVSRAM Control, Alarm Wake-up 3V Op on L Version
BUZ78 , SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ80 ,Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V < 4 Ω ..
BUZ80 ,Trans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) TO-220BUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V < 4 Ω ..
BUZ80A ,Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220BUZ80A N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220FAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 ..
BUZ80A. ,Trans MOSFET N-CH 800V 3.8A 3-Pin(3+Tab) TO-220ELECTRICAL CHARACTERISTICS(Tcase =25 C unless otherwisespecified)OFFSymbol Parameter Test Condition ..
BUZ80FI ,NBUZ80BUZ80FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DBUZ80 800 V < 4 Ω ..
BQ4014MB-120-BQ4014MB-85
256Kx8 Nonvolatile SRAM, 5% Voltage Tolerance
