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BQ3285LFSS-A1 |BQ3285LFSSA1BQN/a5900avaiY2K Enhanced ACPI Compliant RTC IC w 240x8 NVSRAM, Alarm Wake-up 3.3V op 32kHz Dedicated Output
BQ3285LFSS-A1 |BQ3285LFSSA1TIN/a24960avaiY2K Enhanced ACPI Compliant RTC IC w 240x8 NVSRAM, Alarm Wake-up 3.3V op 32kHz Dedicated Output


BQ3285LFSS-A1 ,Y2K Enhanced ACPI Compliant RTC IC w 240x8 NVSRAM, Alarm Wake-up 3.3V op 32kHz Dedicated Output
BQ3285LFSS-A1 ,Y2K Enhanced ACPI Compliant RTC IC w 240x8 NVSRAM, Alarm Wake-up 3.3V op 32kHz Dedicated Output
BQ3285LSS ,-Real-Time Clock RTC
BQ3285P-SB2 ,RTC IC with 114x8 NVSRAMfeatures and bat-➤ Functionally compatible with theand hourstery operation. Other
BQ3285S-SB2 ,RTC IC with 114x8 NVSRAMfeatures in-DS1285clude three maskable interrupt- 12- or 24-hour formatsources, square wave output, ..
BQ3285S-SB2TR ,RTC IC with 114x8 NVSRAMBlock DiagramAD –AD Multiplexed address/data input/0 7Pin DescriptionsoutputMOT Bus type select inp ..
BUZ171 ,P-Channel SIPMOS Power TransistorCharacteristics, at T = 25°C, unless otherwise specifiedj Parameter Symbol Values Unitmin. typ. max ..
BUZ171 ,P-Channel SIPMOS Power TransistorBUZ 171® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 Pin 3G D ..
BUZ171 ,P-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 °C -50 - -GS ..
BUZ172 ,SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)CharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = -0.25 mA, T = 25 ˚C -100 - -G ..
BUZ173 ,P-Channel SIPMOS Power Transistor BUZ 173® SIPMOS Power Transistor• P channel• Enhancement mode• Avalanche ratedPin 1 Pin 2 ..
BUZ20 ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 20® SIPMOS Power Transistor• N channel• Enhancement mode• Avalanche-rated Pin 1 Pin 2 ..


BQ3285LFSS-A1
Y2K Enhanced ACPI Compliant RTC IC w 240x8 NVSRAM, Alarm Wake-up 3.3V op 32kHz Dedicated Output
ic,good price


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