BQ29414PWR ,Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.55V) 8-TSSOP -40 to 110
BQ29415PWR ,Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.60V) 8-TSSOP -40 to 110FEATURES DESCRIPTIONThe bq2941x is a secondary overvoltage protection• 2-, 3-, or 4-Cell Secondary ..
BQ29419 ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
BQ29419PW ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110ELECTRICAL CHARACTERISTICSover recommended operating free-air temperature range, T = 25°C (unless o ..
BQ29419PWG4 ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110FEATURES DESCRIPTIONThe bq2941x is a secondary overvoltage protection• 2-, 3-, or 4-Cell Secondary ..
BQ29419PWG4 ,Voltage Protection for 2, 3, or 4 Cell Li-Ion Batteries 8-TSSOP -40 to 110This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
BUY49S ,Leaded Small Signal Transistor General PurposeBUY49SSILICON NPN TRANSISTOR■ SGS-THOMSON PREFERRED SALESTYPE■ NPN TRANSISTOR■ FAST SWITCHING SPEED ..
BUY71 , Bipolar NPN Device
BUZ10 ,Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220BUZ10®N - CHANNEL 50V - 0.06Ω - 23A TO-220STripFET™ MOSFETTYPE V R IDSS DS(on) DBUZ10 50 V < 0.0 ..
BUZ100 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage V V(BR)DSSV = 0 V, I = 0.25 mA, T = -40 °C 50 - -GS ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)FeaturesDrain source voltage 55 VV• N channel DSDrain-Source on-state resistance 0.015R Ω• Enhancem ..
BUZ100S ,SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)CharacteristicsDrain- source breakdown voltage 55 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
BQ29414PWR
Secondary Over-Voltage Protection for 2-4 cell in series Li-Ion/Poly (4.55V) 8-SM8 -40 to 110
