BPV22NF ,Photo detectorsElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Symbol M ..
BPV23NF ,Photo detectorsElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambParameter Test condition Symbol M ..
BPW16N ,Silicon NPN Phototransistor Document Number 815154 (5) Rev. 2, 20-May-99S – Relative SensitivityrelBPW16NVishay Semicondu ..
BPW17N ,Silicon NPN Phototransistor Document Number 815164 (5) Rev. 2, 20-May-99S – Relative SensitivityrelBPW17NVishay Semicondu ..
BPW21 ,Silicon PN PhotodiodeAbsolute Maximum RatingsT = 25
BPV22NF
Photo detectors
BPV22NF(L)Document Number 81509
Vishay Semiconductorswww.vishay.com
Silicon PIN Photodiode
DescriptionBPV22NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (λ p = 950 nm, srel (λ = 875 nm) > 90 %).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80 %.
Features Large radiant sensitive area (A = 7.5 mm2) Wide viewing angle ϕ = ± 60° Improved sensitivity Fast response times Low junction capacitance Plastic package with universal IR filter Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL Lead-free component Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
ApplicationsInfrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU.-,
TSI.-, or TSH.-Series). High sensitivity detector for
high data rate transmission systems.
The IR filter matches perfectly to the high speed infra-
red emitters in the 830 nm to 880 nm wavelength
range.
Absolute Maximum RatingsTamb = 25 °C, unless otherwise specified
