BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
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DESCRIPTION The BN1A4P is designed for use i ..
BN1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1F4M ,The BN1F4M is designed for use in medium speed switching circuit.PNP SILICON TRANSISTOR
BN1F4M
DESCRIPTION The BN1F4M is designed for use in medium speed swit ..
BN1L3M ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1L3Mon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1L3N ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1L3Non-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BU4831 , Low Voltage Standard CMOS Voltage Detector ICs Ultra-low current consumption
BU4836F-TR , Low Voltage Standard CMOS Voltage Detector ICs
BU4S01 , Single 2-input NOR gate
BU4S01G2 , Single Gate CMOS Logic ICs
BU4S01G2-TR , Single Gate CMOS Logic ICs
BU4S11 , Single 2-input NAND gate
BN1A4M
