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Partno	Mfg	Dc	Qty	Available	Descript
BLT70	PHILIPS	N/a	340	avai	UHF power transistor
BLT70	NXP	N/a	1000	avai	UHF power transistor
BLT70	NXP/PHILIPS	N/a	1000	avai	UHF power transistor

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BLT70
UHF power transistor

Philips Semiconductors Product speciﬁcation
UHF power transistor BLT70
FEATURES Very high efficiency Low supply voltage.
APPLICATIONS Hand-held radio equipment in common emitter class-AB
operation in the 900 MHz communication band.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223H SMD package.
PINNING - SOT223H
QUICK REFERENCE DATA
RF performance at Ts≤60 °C in a common emitter test circuit (see Fig.7).
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics” Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT70
CHARACTERISTICS =25 °C unless otherwise speciﬁed.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT70
APPLICATION INFORMATION
RF performance at Ts≤60 °C in a common emitter test circuit (see note1 and Fig.7).
Note Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR=6: 1 through all phases under the
following conditions: f= 900 MHz; VCE= 6.5 V; PL= 0.5W;Ts≤60 °C.
Philips Semiconductors Product speciﬁcation
UHF power transistor BLT70
Test circuit information

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