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BLT50
UHF power transistor
Philips Semiconductors Product specification
UHF power transistor BLT50
FEATURES SMD encapsulation Gold metallization ensures
excellent reliability.
DESCRIPTIONNPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in hand-held radio
equipment in the 470 MHz
communications band.
PINNING - SOT223
QUICK REFERENCE DATARF performance at Ts ≤ 60 °C in a common emitter class-B test circuit
(note 1).
Note Ts = temperature at soldering point of collector tab.
PIN CONFIGURATION
Philips Semiconductors Product specification
UHF power transistor BLT50
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts = temperature at soldering point of collector tab.
THERMAL RESISTANCE
Philips Semiconductors Product specification
UHF power transistor BLT50
CHARACTERISTICSTj = 25 °C.
Philips Semiconductors Product specification
UHF power transistor BLT50
APPLICATION INFORMATIONRF performance at Ts ≤ 60 °C in a common emitter class-B test circuit.
Ruggedness in class-B operationThe BLT50 is capable of withstanding a load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 9 V, f = 470 MHz
and Ts ≤ 60 °C, where Ts is the temperature at the
soldering point of the collector tab.
Philips Semiconductors Product specification
UHF power transistor BLT50
List of components (see test circuit)
Notes American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2);
thickness1⁄16 inch.
