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BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
1. Product profile
1.1 General description W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features and benefits Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: Average output power=2W Power gain=30 dB (typ) Efficiency=9% IMD3= −48 dBc ACPR= −50 dBc Integrated temperature compensated bias Excellent thermal stability Biasing of individual stages is externally accessible Integrated ESD protection Small component size, very suitable for PA size reduction On-chip matching (input matched to 50 Ohm, output partially matched) High power gain Designed for broadband operation (2100 MHz to 2200 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 4 — 7 March 2011 Product data sheet
Table 1. Typical performanceTypical RF performance at Th = 25 °C.
2-carrier W-CDMA 2110 to 2170 28 2 29.5 9 −48[1] −50[1]
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
2. Pinning information
2.1 Pinning
2.2 Pin description
3. Ordering information
Table 2. Pin descriptionGND 1, 11, 12, 16 ground
VDS1 2 first stage drain-source voltage
n.c. 3, 4, 5, 7, 8, 13, 15 not connected
RF_INPUT 6 RF input
VGS1 9 first stage gate-source voltage
VGS2 10 second stage gate-source voltage
RF_OUT/VDS2 14 RF output or second stage drain-source voltage
RF_GND flange RF ground
Table 3. Ordering informationBLM6G22-30 HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1
BLM6G22-30G HSOP16 plastic, heatsink small outline package; 16 leads SOT822-1
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
4. Block diagram
5. Limiting values
6. Thermal characteristics[1] Thermal resistance is determined under specific RF operating conditions.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
ID1 first stage drain current - 3 A
ID2 second stage drain current - 9 A
Tstg storage temperature −65 +150 °C junction temperature - 200 °C
Table 5. Thermal characteristicsRth(j-c)1 first stage thermal resistance
from junction to case
Tcase = 25 °C; PL =2W;
2-carrier W-CDMA
[1] 3.9 K/W
Rth(j-c)2 second stage thermal resistance
from junction to case
Tcase = 25 °C; PL =2W;
2-carrier W-CDMA
[1] 2.1 K/W
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
7. Characteristics
8. Application information
8.1 RuggednessThe BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch
corresponding to VSWR= 5 : 1 through all phases under the following conditions:
VDS =28V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA.
8.2 Impedance information[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
Table 6. CharacteristicsMode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f1= 2112.5 MHz; f2= 2122.5 MHz; f3= 2157.5 MHz; = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 =280 mA; Th = 25 °C unless otherwise specified;
in a production test circuit as described in Section 9 “Test information”. power gain PL(AV) = 2 W 27.5 30 32.5 dB
RLin input return loss PL(AV) = 2 W - −14 −10 dB drain efficiency PL(AV) = 2 W 7.5 9 - %
IMD3 third-order intermodulation distortion PL(AV) = 2 W - −48 −44.5 dBc
ACPR adjacent channel power ratio PL(AV) = 2 W - −50 −47 dBc
Table 7. Typical impedance2075 40.9 + j22.8 18.0 − j5.5
2085 41.2 + j23.2 17.8 − j5.6
2095 41.6 + j23.3 17.7 − j5.7
2105 41.9 + j23.3 17.7 − j5.9
2115 42.1 + j23.3 17.6 − j6.0
2125 42.2 + j23.2 17.4 − j6.0
2135 42.4 + j23.1 17.3 − j6.1
2145 42.3 + j22.9 17.2 − j6.1
2155 42.5 + j22.8 17.0 − j6.2
2165 42.6 + j22.8 16.8 − j6.3
2175 42.7 + j22.8 16.6 − j6.4
2185 43.0 + j23.0 16.4 − j6.6
2195 43.6 + j23.1 16.3 − j6.9
2205 44.2 + j23.3 16.1 − j7.2
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
8.3 Performance curvesPerformance curves are measured in a BLM6G22-30G application circuit.
NXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMICNXP Semiconductors BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
9. Test information[1] American Technical Ceramics (ATC) type 100A or capacitor of same quality.
Table 8. List of componentsFor test circuit see Figure 10.
C1, C13 multilayer ceramic chip capacitor 0.3 pF [1]
C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 μF; 50 V
C3, C15 electrolytic capacitor 220 μF; 35 V
C5, C9, C10, C14 multilayer ceramic chip capacitor 10 pF [1]
C6, C7 multilayer ceramic chip capacitor 100 nF SMD resistor 0805 1 kΩ SMD resistor 0805 3.9 kΩ
