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BLF8G22LS-160BV from NXP,NXP Semiconductors

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15.625ms

BLF8G22LS-160BV

Manufacturer: NXP

Power LDMOS transistor

Partnumber Manufacturer Quantity Availability
BLF8G22LS-160BV,BLF8G22LS160BV NXP 120 In Stock

Description and Introduction

Power LDMOS transistor The BLF8G22LS-160BV is a power LDMOS transistor manufactured by NXP Semiconductors. Here are its key specifications:

- **Frequency Range**: 1805 - 1880 MHz  
- **Output Power**: 160 W  
- **Gain**: 17.5 dB (typical)  
- **Efficiency**: 45% (typical)  
- **Voltage (VDS)**: 32 V  
- **Package**: SOT1229  
- **Application**: Designed for use in RF power amplifiers, particularly in base stations and other telecommunications infrastructure.  

This transistor is optimized for high efficiency and linearity in the 1.8 GHz frequency band.

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