BLF8G22LS-160BV ,Power LDMOS transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
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BLF8G22LS-160BV
Power LDMOS transistor
1. Product profile
1.1 General description160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2000 MHz to 2200 MHz.
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing5 MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Decoupling leads to enable improved video bandwidth (100 MHz typical) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Integrated current sense Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifier for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF8G22LS-160BV
Power LDMOS transistor
Rev. 1 — 25 June 2012 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 2110to 2170 1300 32 55 18.0 32 31[1]
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values[1] Continuous use at maximum temperature will affect MTTF.
5. Recommended operating conditions
6. Thermal characteristics
Table 2. Pinning
Table 3. Ordering informationBLF8G22LS-160BV- earless flanged LDMOST ceramic package; 6 leads SOT1120B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
VGS(sense) sense gate-source voltage 0.5 +9 V
Tstg storage temperature 65 +150 C junction temperature - 200 C
Tcase case temperature [1]- 150 C
Table 5. Operating conditionsTcase case temperature 40 - +125 C
Table 6. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL=55W 0.27 K/W
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
7. Characteristics
8. Test information
8.1 Ruggedness in class-AB operationThe BLF8G22LS-160BV is capable to withstand a load mismatch corresponding to
VSWR=10: 1 through all phases under the following conditions: VDS =32V;
IDq= 1300 mA; PL= 160 W; f= 2110 MHz.
Table 7. CharacteristicsTj = 25 C; unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =2.16 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 216 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 4.5 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V
-40 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 450 nA
gfs forward transconductance VDS =10V; ID= 10.8A - 16 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =7.56A
-0.06-
IDq quiescent drain current main transitor:
VDS =32 V
sense transitor:
IDS = 23.4 mA;
VDS =30.4V
1175 1300 1425 mA
Table 8. Application informationTest signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1; 64
DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at
VDS = 32 V; IDq = 1300 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test
circuit. power gain PL(AV) = 55 W 16.8 18.0 19.7 dB
RLin input return loss PL(AV) = 55 W - 13 7dB drain efficiency PL(AV) = 55 W 29 32 - %
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 55 W - 31 28 dBc
Table 9. Application informationMode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f = 2167.5 MHz; RF performance at VDS = 32 V; IDq =1300mA; Tcase = 25 C;
unless otherwise specified; in a class-AB production test circuit.
PARO output peak-to-average ratio PL(AV) =115 W; 0.01% probabilityon CCDF
3.9 4.3- dB
PL(M) peak output power 290 310- W
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.2 Impedance information[1] ZS and ZL defined in Figure1.
8.3 VBW in class-AB operationThe BLF8G22LS-160BV shows 100 MHz (typical) video bandwidth in class-AB test circuit
in 2.1 GHz band at 32 V and 1.3A.
Table 10. Typical impedanceIDq = 1300 mA; main transistor VDS = 32 V.
2110 2.2 j4.6 1.4 j2.8
2140 2.1 j4.5 1.4 j2.6
2170 2.1 j4.3 1.3 j2.4
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.4 CW pulseNXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.5 2-carrier W-CDMANXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.6 2-tone VBW
