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BLF7G27LS-75P
Power LDMOS transistor
1. Product profile
1.1 General description W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2300 MHz to 2700 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2300 MHz to 2700 MHz frequency range
BLF7G27L-75P;
BLF7G27LS-75P
Power LDMOS transistor
Rev. 2 — 14 July 2010 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
IS-95 2300to 2400 650 28 12 17 26 46[1]
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF7G27L-75P (SOT1121A)
BLF7G27LS-75P (SOT1121B)
Table 3. Ordering informationBLF7G27L-75P - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT1121A
BLF7G27LS-75P- earless flanged LDMOST ceramic package; 4 leads SOT1121B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 18 A
Tstg storage temperature 65 +150 C junction temperature - 225 C
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G27L-75P and BLF7G27LS-75P are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =650 mA; PL=75W (CW); f= 2300 MHz.
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL =10W 0.5 K/W
Table 6. CharacteristicsTj = 25 C; per section unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID=50 mA 1.3 1.8 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 A
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V
-9.5 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 500 nA
gfs forward transconductance VDS =10V; ID =2.5A - 3.8 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =3.5A
-0.29 -
Table 7. Functional test informationMode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1= 2300 MHz; f2= 2400 MHz; RF performance at VDS =28V; IDq =650 mA;
Tcase =25 C; 2 sections combined unless otherwise specified; in a class-AB production test circuit.
PL(AV) average output power - 12 - W power gain PL(AV) =12W 15.8 17 - dB
RLin input return loss PL(AV) =12W - 12 8dB drain efficiency PL(AV) =12W 23 26 - %
ACPR885k adjacent channel power ratio (885 kHz) PL(AV) =12W - 46 42 dBc
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
7.2 One-tone CW
7.3 Single carrier IS-95Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13).
PAR= 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistorNXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
7.4 Single carrier W-CDMA3GPP; test model 1; 64 DPCH; PAR= 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
NXP Semiconductors BLF7G27L-75P; BLF7G27LS-75P
Power LDMOS transistor
