Home ›  B › B20 > BLF7G27LS-100,Power LDMOS transistor

BLF7G27LS-100 Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BLF7G27LS-100 |BLF7G27LS100	NXP	N/a	4	avai	Power LDMOS transistor

BLF7G27LS-100 ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-140 ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-75P ,Power LDMOS transistorapplications in the 2300 MHz to 2700 MHz frequency rangeBLF7G27L-75P; BLF7G27LS-75PNXP Semiconducto ..
BLF7G27LS-90P ,Power LDMOS transistorapplications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performanceTypical RF perfo ..
BLF7G27LS-90PG , RF Manual 16th edition
BLF8G22LS-160BV ,Power LDMOS transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BTS5590G , SPI Power Controller
BTS5590G , SPI Power Controller
BTS5662E , SPI Power Controller
BTS5662E , SPI Power Controller
BTS5672E , SPI Power Controller
BTS612N1 ,Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

---

BLF7G27LS-100
Power LDMOS transistor
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for base stations and multi carrier applications in the
2500 MHzto 2700 MHz frequency range.
BLF7G27L-100;
BLF7G27LS-100
Power LDMOS transistor
Rev. 3 — 22 July 2011 Product data sheet
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
IS-95 2500to 2700 900 28 20 18 28 45[1] -
Single carrier W-CDMA 2500to 2700 900 28 25 17.5 30 - 41[2]
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF7G27L-100 (SOT502A)
BLF7G27LS-100 (SOT502B)
Table 3. Ordering information
BLF7G27L-100 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF7G27LS-100 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 28 A
Tstg storage temperature 65 +150 C junction temperature - 200 C
Table 5. Thermal characteristics
Rth(j-c) thermal resistance from junction to case Tcase =80 C; PL= 100W 0.25 K/W
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
6. Characteristics
7. Test information
Remark: All testing performed in a class-AB production test circuit.
7.1 Ruggedness in class-AB operation
The BLF7G27L-100 and BLF7G27LS-100 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =900 mA; PL= 100W (CW); f= 2500 MHz.
Table 6. Characteristics
Tj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID= 153 mA 1.5 1.8 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 A
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V
25.1 29 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 500 nA
gfs forward transconductance VDS =10V; ID =153 mA - 1.34- S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =5.35A
-0.1 - 
Table 7. Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1= 2500 MHz; f2= 2700 MHz; RF performance at VDS =28V; IDq =900 mA;
Tcase =25 C; unless otherwise specified.
PL(AV) average output power - 20 - W power gain 16.3 18 - dB
RLin input return loss - 10- dB drain efficiency 24 28 - %
ACPR885k adjacent channel power ratio (885 kHz) - 45 40 dBc
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8- 13).
PAR= 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
7.3 Pulsed CW
NXP Semiconductors BLF7G27L-100; BLF7G27LS-100
Power LDMOS transistor
7.4 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR= 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED