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BLF7G24LS-140
Power LDMOS transistor
1. Product profile
1.1 General description140 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF7G24L-140;
BLF7G24LS-140
Power LDMOS transistor
Rev. 3 — 1 August 2011 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
IS-95 2300to 2400 1300 28 30 18.5 26.5 45[1]
1 carrier W-CDMA 2300to 2400 1300 28 50 18.5 33 - 35[2]
NXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
BLF7G24L-140 (SOT502A)
BLF7G24LS-140 (SOT502B)
Table 3. Ordering informationBLF7G24L-140 - flanged LDMOST ceramic package; 2 mounting holes; leads
SOT502A
BLF7G24LS-140 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 28 A
Tstg storage temperature 65 +150 C junction temperature - 200 C
Table 5. Thermal characteristicsRth(j-c) thermal resistance from junction to case Tcase =80 C; PL= 125W 0.28 K/W
NXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
6. Characteristics
7. Test information
Remark: All testing performed in a class-AB production test circuit.
7.1 Ruggedness in class-AB operationThe BLF7G24L-140 and BLF7G24LS-140 are capable of withstanding a load mismatch
corresponding to VSWR= 10 : 1 through all phases under the following conditions:
VDS =28V; IDq =1300mA; PL= 140W (CW); f= 2300 MHz.
Table 6. CharacteristicsTj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1mA 65 - - V
VGS(th) gate-source threshold voltage VDS= 10 V; ID= 216 mA 1.5 1.8 2.3 V
IDSS drain leakage current VGS =0V; VDS =28V - - 5 A
IDSX drain cut-off current VGS =VGS(th)+ 3.75 V;
VDS =10V 42 - A
IGSS gate leakage current VGS =11V; VDS=0V - - 500 nA
gfs forward transconductance VDS =10V; ID =216 mA - 1.87 - S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =7.56A
-69 - m
Table 7. Functional test informationMode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f1= 2300 MHz; f2= 2400 MHz; RF performance at VDS =28V; IDq =1300mA;
Tcase =25 C; unless otherwise specified.
PL(AV) average output power - 30 - W power gain 17.5 18.5- dB
RLin input return loss - 12- dB drain efficiency 23 26.5- %
ACPR885k adjacent channel power ratio (885 kHz) - 45 40 dBc
NXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
7.2 Single carrier IS-95Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz
NXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
NXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
7.3 Pulsed CWNXP Semiconductors BLF7G24L-140; BLF7G24LS-140
Power LDMOS transistor
7.4 Single carrier W-CDMA3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz.
