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BLF7G20LS-250P
Power LDMOS transistor
1. Product profile
1.1 General description250 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1880 MHz.
[1] Test signal: 3GPP; test model 1;64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
1.2 Features and benefits Excellent ruggedness High-efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1880 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the
1805 MHz to 1880 MHz frequency range
BLF7G20L-250P;
BLF7G20LS-250P
Power LDMOS transistor
Rev. 4 — 12 July 2013 Product data sheet
Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
2-carrier W-CDMA 1805to 1880 1900 28 70 18 35 29.5[1]
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
2. Pinning information[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
BLF7G20L-250P (SOT539A)
BLF7G20LS-250P (SOT539B)
Table 3. Ordering informationBLF7G20L-250P - flanged balanced LDMOST ceramic package; mounting holes; 4 leads
SOT539A
BLF7G20LS-250P- earless flanged balanced LDMOST ceramic package; leads
SOT539B
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V drain current - 65 A
Tstg storage temperature 65 +150 C junction temperature - 200 C
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operationThe BLF7G20L-250P and BLF7G20LS-250P are capable of withstanding a load
mismatch corresponding to a VSWR= 10 : 1 through all phases under the following
conditions: VDS =28 V; IDq= 1900 mA; PL(1dB)= 245W (CW); f= 1805 MHz to
1880 MHz.
Table 5. Thermal characteristicsRth(j-c) thermal resistance from
junction to case
Tcase =80 C; PL =70W; VDS =28V;
IDq= 1900 mA; Tj 150C
0.20 K/W
Table 6. CharacteristicsTj = 25 C unless otherwise specified.
V(BR)DSS drain-source breakdown voltage VGS =0V; ID =1.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; ID= 150 mA 1.5 1.78 2.3 V
IDSS drain leakage current VGS =0V; VDS=28V --2.8 A
IDSX drain cut-off current VGS =VGS(th) +3.75 V;
VDS =10V 33.4 37.54A
IGSS gate leakage current VGS =11V; VDS =0V - 68.3 - nA
gfs forward transconductance VDS =10V; ID= 7.5A - 12.37- S
RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75V; =5.25A 0.078 0.135
Table 7. 2-carrier W-CDMA functional test informationClass-AB production test circuit; PAR = 8.4 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f= 1805 MHz to 1880 MHz; RF performance at VDS =28V;
IDq= 1900 mA; Tcase =25 C; unless otherwise specified.
PL(AV) average output power - 70 - W power gain PL(AV) =70W 16 18 - dB
RLin input return loss PL(AV) =70W - 12 - dB drain efficiency PL(AV) =70W 30 35 - %
ACPR adjacent channel power ratio PL(AV) =70W - 29.5 24.5 dBc
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
7.2 Impedance information[1] ZS and ZL defined in Figure1.
Table 8. Typical impedanceMeasured load-pull data half device; IDq = 950 mA; VDS = 28 V.
1750 1.31 j3.53 2.47 j3.91
1805 1.39 j3.75 2.27 j3.63
1845 1.48 j4.10 2.32 j3.19
1880 1.55 j4.19 1.89 j3.15
1930 1.97 j4.48 1.70 j2.95
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
7.3 Single carrier W-CDMA3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz; channel spacing=5 MHz; VDS = 28 V; IDq= 1900 mA
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
7.4 One tone CWVDS = 28 V; IDq = 1900 mA.
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
7.5 2-carrier WCDMA characteristicsVDS = 28 V; IDq = 1900 mA; channel spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability
on the CCDF.
NXP Semiconductors BLF7G20L-250P; BLF7G20LS-250P
Power LDMOS transistor
7.6 Test circuit[1] See mechanical drawing (Figure 12).
Table 9. List of componentsFor test circuit see Figure 12.
Base plate [1]C3, C4, C9,
C10
multi layer ceramic chip capacitor 47 pF ATC 800B mount on edge multi layer ceramic chip capacitor 1.2 pF ATC 800B mount on edge
C6, C7 chip capacitor 560 pF ATC 100A multi layer ceramic chip capacitor 68 pF ATC 800B mount on edge
C11, C12 multi layer ceramic chip capacitor 10 FTDK
C13 electrolytic capacitor 470 F; 63V
C15, C16 multi layer ceramic chip capacitor 100 nF Phillips 1206
R2, R3 chip resistor 10 Philips 0603
